BYC10-600_15 datasheet(4/9 Pages) PHILIPS

Il numero della parte	BYC10-600

Spiegazioni elettronici	Hyperfast power diode

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NXP Semiconductors

BYC10-600

Hyperfast power diode

BYC10-600

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Product data sheet

27 May 2013

4 / 9

9. Characteristics

Table 6.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

IF = 10 A; Tj = 25 °C; Fig. 4

-

2

2.9

V

IF = 10 A; Tj = 150 °C; Fig. 4

-

1.4

1.8

V

VF

forward voltage

IF = 20 A; Tj = 150 °C; Fig. 4

-

1.7

2.3

V

VR = 600 V; Tj = 25 °C; Fig. 5

-

9

200

µA

IR

reverse current

VR = 500 V; Tj = 100 °C; Fig. 5

-

1.1

3

mA

Dynamic characteristics

IF = 1 A; VR = 30 V; dIF/dt = 50 A/µs;

Tj = 25 °C; Fig. 6

-

35

55

ns

IF = 10 A; VR = 400 V; dIF/dt = 500 A/

µs; Tj = 25 °C; Fig. 6

-

19

-

ns

trr

reverse recovery time

IF = 10 A; VR = 400 V; dIF/dt = 500 A/

µs; Tj = 100 °C; Fig. 6

-

32

40

ns

IF = 10 A; VR = 400 V; dIF/dt = 100 A/

µs; Tj = 125 °C; Fig. 6

-

3

7.5

A

IRM

peak reverse recovery

current

IF = 10 A; VR = 400 V; dIF/dt = 500 A/

µs; Tj = 125 °C; Fig. 6

-

9.5

12

A

VFRM

forward recovery

voltage

IF = 10 A; dIF/dt = 100 A/µs; Tj = 25 °C;

Fig. 7

-

8

11

V

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