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IRLML6401PBF Scheda tecnica(PDF) 2 Page - International Rectifier

Il numero della parte IRLML6401PBF
Spiegazioni elettronici  Ultra Low On-Resistance
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Produttore elettronici  IRF [International Rectifier]
Homepage  http://www.irf.com
Logo IRF - International Rectifier

IRLML6401PBF Scheda tecnica(HTML) 2 Page - International Rectifier

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April 28, 2014
IRLML6401PbF
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
––– –––
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

––– –––
p-n junction diode.
VSD
Diode Forward Voltage
––– ––– -1.2
V
TJ = 25°C, IS = -1.3A, VGS = 0V
‚
trr
Reverse Recovery Time
–––
22
33
ns
TJ = 25°C, IF = -1.3A
Qrr
Reverse RecoveryCharge
–––
8.0
12
nC
di/dt = -100A/μs
‚
 Repetitive rating; pulse width limited by
max. junction temperature.
Notes:
‚ Pulse width ≤ 300μs; duty cycle ≤ 2%.
Source-Drain Ratings and Characteristics
-1.3
-34
A
S
D
G
ƒ Surface mounted on 1" square single layer 1oz. copper FR4 board,
steady state.
„ Starting TJ = 25°C, L = 3.5mH
RG = 25Ω, IAS = -4.3A.
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
-12
–––
–––
V
VGS = 0V, ID = -250μA
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
––– -0.007 –––
V/°C Reference to 25°C, ID = -1mA
––– ––– 0.050
VGS = -4.5V, ID = -4.3A
‚
RDS(on)
Static Drain-to-Source On-Resistance
––– ––– 0.085
VGS = -2.5V, ID = -2.5A
‚
––– ––– 0.125
VGS = -1.8V, ID = -2.0A
‚
VGS(th)
Gate Threshold Voltage
-0.40 -0.55 -0.95
V
VDS = VGS, ID = -250μA
gfs
Forward Transconductance
8.6
–––
–––
S
VDS = -10V, ID = -4.3A
––– ––– -1.0
VDS = -12V, VGS = 0V
––– –––
-25
VDS = -9.6V, VGS = 0V, TJ = 55°C
Gate-to-Source Forward Leakage
––– ––– -100
VGS = -8.0V
Gate-to-Source Reverse Leakage
––– –––
100
VGS = 8.0V
Qg
Total Gate Charge
–––
10
15
ID = -4.3A
Qgs
Gate-to-Source Charge
–––
1.4
2.1
nC
VDS = -10V
Qgd
Gate-to-Drain ("Miller") Charge
–––
2.6
3.9
VGS = -5.0V
‚
td(on)
Turn-On Delay Time
–––
11
–––
VDD = -6.0V
tr
Rise Time
–––
32
–––
ID = -1.0A
td(off)
Turn-Off Delay Time
––– 250
–––
RD = 6.0
Ω
tf
Fall Time
––– 210
–––
RG = 89
Ω ‚
Ciss
Input Capacitance
––– 830
–––
VGS = 0V
Coss
Output Capacitance
––– 180
–––
pF
VDS = -10V
Crss
Reverse Transfer Capacitance
––– 125
–––
ƒ = 1.0MHz
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
IGSS
μA
Ω
IDSS
Drain-to-Source Leakage Current
nA
ns


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