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IRLML2803PBF Scheda tecnica(PDF) 2 Page - International Rectifier

Il numero della parte IRLML2803PBF
Spiegazioni elettronici  ULTRA LOW ON RESISFANCE
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Produttore elettronici  IRF [International Rectifier]
Homepage  http://www.irf.com
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IRLML2803PBF Scheda tecnica(HTML) 2 Page - International Rectifier

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April 24, 2014
IRLML2803PbF
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
30
––– –––
V
VGS = 0V, ID = 250µA
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
––– 0.029 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.25
VGS = 10V, ID = 0.91A ƒ
––– ––– 0.40
VGS = 4.5V, ID = 0.46A ƒ
VGS(th)
Gate Threshold Voltage
1.0 ––– –––
V
VDS = VGS, ID = 250µA
gfs
Forward Transconductance
0.87 ––– –––
S
VDS = 10V, ID = 0.46A
––– ––– 1.0
VDS = 24V, VGS = 0V
––– –––
25
VDS = 24V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage
––– ––– -100
VGS = -20V
Gate-to-Source Reverse Leakage
––– ––– 100
VGS = 20V
Qg
Total Gate Charge
––– 3.3
5.0
ID = 0.91A
Qgs
Gate-to-Source Charge
––– 0.48 0.72
nC
VDS = 24V
Qgd
Gate-to-Drain ("Miller") Charge
––– 1.1
1.7
VGS = 10V, See Fig. 6 and 9 ƒ
td(on)
Turn-On Delay Time
––– 3.9 –––
VDD = 15V
tr
Rise Time
––– 4.0 –––
ID = 0.91A
td(off)
Turn-Off Delay Time
––– 9.0 –––
RG = 6.2Ω
tf
Fall Time
––– 1.7 –––
RD = 16Ω, See Fig. 10 ƒ
Ciss
Input Capacitance
–––
85
–––
VGS = 0V
Coss
Output Capacitance
–––
34
–––
pF
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
15
–––
ƒ = 1.0MHz, See Fig. 5
Ω
µA
nA
ns
IGSS
IDSS
Drain-to-Source Leakage Current
RDS(on)
Static Drain-to-Source On-Resistance
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode) 
p-n junction diode.
VSD
Diode Forward Voltage
––– ––– 1.2
V
TJ = 25°C, IS = 0.91A, VGS = 0V ƒ
trr
Reverse Recovery Time
–––
26
40
ns
TJ = 25°C, IF = 0.91A
Qrr
Reverse RecoveryCharge
–––
22
32
nC
di/dt = 100A/µs ƒ
Source-Drain Ratings and Characteristics
A
––– –––
7.3
––– ––– 0.54
S
D
G
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ ISD ≤ 0.91A, di/dt ≤ 120A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
Notes:
ƒ Pulse width ≤ 300µs; duty cycle ≤ 2%.
… Limited by TJmax, starting TJ = 25°C, L = 9.4mH, RG = 25Ω, IAS = 0.9A.
„ Surface mounted on FR-4 board, t ≤ 5sec.


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