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IRLIB9343PBF Scheda tecnica(PDF) 1 Page - International Rectifier

Il numero della parte IRLIB9343PBF
Spiegazioni elettronici  ADVANCED PROCESS TECHNOLOGY
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Produttore elettronici  IRF [International Rectifier]
Homepage  http://www.irf.com
Logo IRF - International Rectifier

IRLIB9343PBF Scheda tecnica(HTML) 1 Page - International Rectifier

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Description
This Digital Audio HEXFET
® is specifically designed for Class-D audio amplifier applications. This MosFET utilizes the latest
processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery
and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD
and EMI. Additional features of this MosFET are 175°C operating junction temperature and repetitive avalanche capability.
These features combine to make this MosFET a highly efficient, robust and reliable device for Class-D audio amplifier
applications.
PD - 95745
Features
l Advanced Process Technology
l Key Parameters Optimized for Class-D Audio
Amplifier Applications
l Low RDSON for Improved Efficiency
l Low Qg and Qsw for Better THD and Improved
Efficiency
l Low Qrr for Better THD and Lower EMI
l 175°C Operating Junction Temperature for
Ruggedness
l Repetitive Avalanche Capability for Robustness and
Reliability
l Lead-Free
S
D
G
DIGITAL AUDIO MOSFET
VDS
-55
V
RDS(ON) typ. @ VGS = -10V
93
m
:
RDS(ON) typ. @ VGS = -4.5V
150
m
:
Qg typ.
31
nC
TJ max
175
°C
Key Parameters
IRLIB9343PbF
TO-220 Full-Pak
Absolute Maximum Ratings
Parameter
Units
VDS
Drain-to-Source Voltage
V
VGS
Gate-to-Source Voltage
ID @ TC = 25°C
Continuous Drain Current, VGS @ -10V
A
ID @ TC = 100°C
Continuous Drain Current, VGS @ -10V
IDM
Pulsed Drain Current
c
PD @TC = 25°C
Power Dissipation
W
PD @TC = 100°C
Power Dissipation
Linear Derating Factor
W/°C
TJ
Operating Junction and
°C
TSTG
Storage Temperature Range
Mounting Torque, 6-32 or M3 screw
lbf
yin (Nym)
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
f
–––
3.84
°C/W
RθJA
Junction-to-Ambient
f
–––
65
Max.
-10
-60
±20
-55
-14
-40 to + 175
10 (1.1)
33
20
0.26


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