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IRLHS6376PBF Scheda tecnica(PDF) 2 Page - International Rectifier

Il numero della parte IRLHS6376PBF
Spiegazioni elettronici  Compatible with Existing Surface Mount Techniques
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Produttore elettronici  IRF [International Rectifier]
Homepage  http://www.irf.com
Logo IRF - International Rectifier

IRLHS6376PBF Scheda tecnica(HTML) 2 Page - International Rectifier

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IRLHS6376PbF
2
www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
January 21, 2014
S
D
G
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Current limited by package.
ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%.
„ When mounted on 1 inch square copper board.
… Rθ is measured at TJ of approximately 90°C.
† For DESIGN AID ONLY, not subject to production testing.
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC (Bottom)
Junction-to-Case
g
–––
19
RθJC (Top)
Junction-to-Case
g
–––
175
°C/W
RθJA
Junction-to-Ambient
f
–––
86
RθJA (<10s)
Junction-to-Ambient
f
–––
69
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ. Max. Units
BVDSS
Drain-to-Source Breakdown Voltage
30
–––
–––
V
∆ΒVDSS/∆TJ
Breakdown Voltage Temp. Coefficient
–––
0.023
–––
V/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
48
63
–––
61
82
VGS(th)
Gate Threshold Voltage
0.5
0.8
1.1
V
∆VGS(th)
Gate Threshold Voltage Coefficient
–––
-3.6
–––
mV/°C
IDSS
Drain-to-Source Leakage Current
–––
–––
1.0
–––
–––
150
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
Gate-to-Source Reverse Leakage
–––
–––
-100
gfs
Forward Transconductance
8.8
–––
–––
S
Qg
Total Gate Charge
h
–––
2.8
–––
VDS = 15V
Qgs
Gate-to-Source Charge
h
–––0.13–––
Qgd
Gate-to-Drain Charge
h
–––
1.1
–––
RG
Gate Resistance
–––
4.6
–––
td(on)
Turn-On Delay Time
–––
4.4
–––
tr
Rise Time
–––11–––
td(off)
Turn-Off Delay Time
–––
11
–––
tf
Fall Time
–––
9.4
–––
Ciss
Input Capacitance
–––
270
–––
Coss
Output Capacitance
–––
32
–––
Crss
Reverse Transfer Capacitance
–––
20
–––
Diode Characteristics
Parameter
Min.
Typ. Max. Units
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
Ù
VSD
Diode Forward Voltage
–––
–––
1.2
V
trr
Reverse Recovery Time
–––
8.0
12
ns
Qrr
Reverse Recovery Charge
–––
5.9
8.9
nC
ton
Forward Turn-On Time
Time is dominated by parasitic Inductance
MOSFET symbol
nA
ns
A
pF
nC
VGS = 4.5V
VGS = 12V
VGS = -12V
–––
–––
30
–––
–––
7.6
d
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 4.5V, ID = 3.4A ed
Conditions
See Fig.15
ƒ = 1.0MHz
TJ = 25°C, IF = 3.4Ad, VDD = 15V
di/dt = 260A/µs
TJ = 25°C, IS = 3.4Ad, VGS = 0V e
showing the
integral reverse
p-n junction diode.
RG=1.8Ω
VDS = 10V, ID = 3.4Ad
VDS = 24V, VGS = 0V, TJ = 125°C
µA
ID = 3.4Ad (See Fig.17 & 18)
ID = 3.4A
d
VGS = 0V
VDS = 25V
VDS = 24V, VGS = 0V
VDS = VGS, ID = 10µA
VGS = 2.5V, ID = 3.4A ed
m
VDD = 10V, VGS = 4.5V


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