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TIP112G Scheda tecnica(PDF) 2 Page - ON Semiconductor

Il numero della parte TIP112G
Spiegazioni elettronici  Plastic Medium-Power Complementary Silicon Transistors
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Produttore elettronici  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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TIP112G Scheda tecnica(HTML) 2 Page - ON Semiconductor

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TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP)
www.onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
TIP110,
TIP115
TIP111,
TIP116
TIP112,
TIP117
Unit
Collector−Emitter Voltage
VCEO
60
80
100
Vdc
Collector−Base Voltage
VCB
60
80
100
Vdc
Emitter−Base Voltage
VEB
5.0
Vdc
Collector Current − Continuous
− Peak
IC
2.0
4.0
Adc
Base Current
IB
50
mAdc
Total Power Dissipation @ TC = 25°C
Derate above 25°C
PD
50
0.4
W
W/°C
Total Power Dissipation @ TA = 25°C
Derate above 25°C
PD
2.0
0.016
W
W/°C
Unclamped Inductive Load Energy − Figure 13
E
25
mJ
Operating and Storage Junction
TJ, Tstg
– 65 to + 150
°C
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
RqJC
2.5
°C/W
Thermal Resistance, Junction−to−Ambient
RqJA
62.5
°C/W
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 1)
(IC = 30 mAdc, IB = 0)
TIP110, TIP115
TIP111, TIP116
TIP112, TIP117
VCEO(sus)
60
80
100
Vdc
Collector Cutoff Current
(VCE = 30 Vdc, IB = 0)
TIP110, TIP115
(VCE = 40 Vdc, IB = 0)
TIP111, TIP116
(VCE = 50 Vdc, IB = 0)
TIP112 ,TIP117
ICEO
2.0
2.0
2.0
mAdc
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
TIP110, TIP115
(VCB = 80 Vdc, IE = 0)
TIP111, TIP116
(VCB = 100 Vdc, IE = 0)
TIP112, TIP117
ICBO
1.0
1.0
1.0
mAdc
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
IEBO
2.0
mAdc
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 1.0 Adc, VCE = 4.0 Vdc)
(IC = 2.0 Adc, VCE = 4.0 Vdc)
hFE
1000
500
Collector−Emitter Saturation Voltage (IC = 2.0 Adc, IB = 8.0 mAdc)
VCE(sat)
2.5
Vdc
Base−Emitter On Voltage (IC = 2.0 Adc, VCE = 4.0 Vdc)
VBE(on)
2.8
Vdc
DYNAMIC CHARACTERISTICS
Small−Signal Current Gain (IC = 0.75 Adc, VCE = 10 Vdc, f = 1.0 MHz)
hfe
25
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
TIP115, TIP116, TIP117
TIP110, TIP111, TIP112
Cob
200
100
pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.


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