BC847BWT1G datasheet(7/13 Pages) ONSEMI

Il numero della parte	BC847BWT1G

Spiegazioni elettronici	General Purpose Transistors

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Produttore elettronici	ONSEMI [ON Semiconductor]

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BC846, BC847, BC848

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BC847B, BC848B

Figure 19. DC Current Gain vs. Collector

Current

Figure 20. DC Current Gain vs. Collector

Current

IC, COLLECTOR CURRENT (A)

0.1

0.01

0.001

0

100

200

600

0.1

0.01

0.001

0.0001

0

0.05

0.30

Figure 21. Collector Emitter Saturation Voltage

vs. Collector Current

Figure 22. Base Emitter Saturation Voltage vs.

Collector Current

IC, COLLECTOR CURRENT (A)

0.1

0.01

0.001

0.0001

0.2

0.3

0.5

0.6

0.7

0.8

1.1

0.1

0.01

0.001

0.0001

0.2

0.3

0.5

0.6

0.8

0.9

1.0

1.2

1

VCE = 1 V

150

°C

−55

°C

25

°C

IC/IB = 20

150

°C

−55

°C

25

°C

0.4

0.9

IC/IB = 20

150

°C

−55

°C

25

°C

0.4

0.7

1.1

VCE = 5 V

150

°C

−55

°C

25

°C

0.10

0.15

0.20

0.25

300

400

500

1.0

Figure 23. Base Emitter Voltage vs. Collector

Current

0.1

0.01

0.001

0

100

200

600

1

VCE = 5 V

150

°C

−55

°C

25

°C

300

400

500

IC, COLLECTOR CURRENT (A)

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