2SD1685F datasheet(2/6 Pages) ONSEMI

Il numero della parte	2SD1685F

Spiegazioni elettronici	Bipolar Transistor 20V, 5A, Low VCE(sat), NPN Single TO-126ML

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Produttore elettronici	ONSEMI [ON Semiconductor]

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2 / 6 page

2SD1685

No.2042-2/6

Electrical Characteristics at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

min

typ

max

Collector Cutoff Current

ICBO

VCB=50V, IE=0A

100

nA

Emitter Cutoff Current

IEBO

VEB=5V, IC=0A

100

nA

DC Current Gain

hFE1VCE=2V, IC=500mA

120*

560*

hFE2VCE=2V, IC=3A

95

Gain-Bandwidth Product

fT

VCE=10V, IC=50mA

120

MHz

Output Capacitance

Cob

VCB=10V, f=1MHz

45

pF

Collector-to-Emitter Saturation Voltage

VCE(sat)

IC=3A, IB=60mA

220

500

mV

Base-to-Emitter Saturation Voltage

VBE(sat)

IC=3A, IB=60mA

1.5

V

Collector-to-Base Breakdown Voltage

V(BR)CBO

IC=10μA, IE=0A

60

V

Collector-to-Emitter Breakdown Voltage

V(BR)CEO

IC=1mA, RBE=∞

20

V

Emitter-to-Base Breakdown Voltage

V(BR)EBO

IE=10μA, IC=0A

6

V

Turn-ON Time

ton

See speciﬁed Test Circuit.

30

ns

Storage Time

tstg

300

ns

Fall Time

tf

40

ns

* : The 2SD1685 is classiﬁed by 500mA hFE as follows :

Rank

E

F

G

hFE

120 to 200

160 to 320

280 to 560

Switching Time Test Circuit

Ordering Information

Device

Package

Shipping

memo

2SD1685G

TO-126ML

200pcs./bag

Pb Free

2SD1685F

TO-126ML

200pcs./bag

VR

RB

+

50Ω

INPUT

OUTPUT

RL

5Ω

100μF

470μF

PW=20μs

IB1

D.C.

≤1%

IB2

IC=10IB1= --10IB2=2A

VCC=10V

VBE= --5V

IC -- VCE

Collector-to-Emitter Voltage, VCE -- V

IC -- VCE

Collector-to-Emitter Voltage, VCE -- V

5

4

3

2

1

0

01

2

3

5

4

IB=0mA

ITR10012

40mA

30mA

20mA

15mA

10mA

5mA

5

4

3

2

1

0

0.2

0.4

0.6

1.0

0.8

IB=0mA

60mA

50mA

40mA

30mA

20mA

15mA

10mA

5mA

ITR10013

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