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IRFBA90N20DPBF Scheda tecnica(PDF) 1 Page - International Rectifier |
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IRFBA90N20DPBF Scheda tecnica(HTML) 1 Page - International Rectifier |
1 / 9 page Notes through are on page 8 www.irf.com 1 09/15/04 IRFBA90N20DPbF SMPS MOSFET HEXFET® Power MOSFET VDSS RDS(on) max ID 200V 0.023 Ω 98A PD - 95902 Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 98 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 71 A IDM Pulsed Drain Current 390 PD @TC = 25°C Power Dissipation 650 W Linear Derating Factor 4.3 W/°C VGS Gate-to-Source Voltage ± 30 V dv/dt Peak Diode Recovery dv/dt 6.3 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C Recommended Clip Force 20 N Absolute Maximum Ratings l High frequency DC-DC converters l Lead-Free Benefits Applications l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current Super-220™ Thermal Resistance Parameter Typ. Max. Units RθJC Junction-to-Case ––– 0.23 RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W RθJA Junction-to-Ambient ––– 58 |
Codice articolo simile - IRFBA90N20DPBF_15 |
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Descrizione simile - IRFBA90N20DPBF_15 |
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