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IRF8714PBF Scheda tecnica(PDF) 1 Page - International Rectifier |
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IRF8714PBF Scheda tecnica(HTML) 1 Page - International Rectifier |
1 / 9 page www.irf.com 1 08/01/06 IRF8714PbF HEXFET® Power MOSFET Notes through
are on page 9 Benefits l Very Low Gate Charge l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current l 20V VGS Max. Gate Rating l 100% tested for Rg l Lead-Free Applications l Control MOSFET of Sync-Buck Converters used for Notebook Processor Power l Control MOSFET for Isolated DC-DC Converters in Networking Systems Top View 8 1 2 3 4 5 6 7 D D D D G S A S S A SO-8 PD - 96116 Description The IRF8714PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry standard SO-8 package. The IRF8714PbF has been optimized for parameters that are critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors for Notebook and Netcom applications. Absolute Maximum Ratings Parameter Units VDS Drain-to-Source Voltage V VGS Gate-to-Source Voltage ID @ TA = 25°C Continuous Drain Current, VGS @ 10V ID @ TA = 70°C Continuous Drain Current, VGS @ 10V A IDM Pulsed Drain Current c PD @TA = 25°C Power Dissipation W PD @TA = 70°C Power Dissipation Linear Derating Factor W/°C TJ Operating Junction and °C TSTG Storage Temperature Range Thermal Resistance Parameter Typ. Max. Units RθJL Junction-to-Drain Lead g ––– 20 °C/W RθJA Junction-to-Ambient fg ––– 50 -55 to + 150 2.5 0.02 1.6 Max. 14 11 110 ± 20 30 VDSS RDS(on) max Qg 30V 8.7m:@VGS = 10V 8.1nC |
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