IRF8252PBF_15 datasheet(1/9 Pages) IRF

Il numero della parte	IRF8252PBF

Spiegazioni elettronici	Synchronous MOSFET for Notebook Processor Power

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Produttore elettronici	IRF [International Rectifier]

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www.irf.com

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07/07/08

IRF8252PbF

HEXFET® Power MOSFET

Notes

through are on page 9

Benefits

l Very Low Gate Charge

l Very Low RDS(on) at 4.5V VGS

l Ultra-Low Gate Impedance

l Fully Characterized Avalanche Voltage

and Current

l 20V VGS Max. Gate Rating

l 100% tested for Rg

l RoHS Compliant (Halogen Free)

l Low Thermal Resistance

Applications

l Synchronous MOSFET for Notebook

Processor Power

l Synchronous Rectifier MOSFET for

Isolated DC-DC Converters

Top View

8

1

2

3

4

5

6

7

D

G

S

A

S

A

SO-8

Description

The IRF8252PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the

industry standard SO-8 package. The IRF8252PbF has been optimized for parameters that are

critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction

and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC

converters that power the latest generation of processors for notebook and Netcom applications.

VDSS

RDS(on) max

Qg

25V 2.7m

:@VGS = 10V 35nC

Absolute Maximum Ratings

Parameter

Units

VDS

Drain-to-Source Voltage

VGS

Gate-to-Source Voltage

ID @ TA = 25°C

Continuous Drain Current, VGS @ 10V

ID @ TA = 70°C

Continuous Drain Current, VGS @ 10V

IDM

Pulsed Drain Current

c

PD @TA = 25°C

Power Dissipation

PD @TA = 70°C

Power Dissipation

Linear Derating Factor

W/°C

TJ

Operating Junction and

TSTG

Storage Temperature Range

Thermal Resistance

Parameter

Typ.

Max.

Units

RθJL

Junction-to-Drain Lead

g

–––

20

RθJA

Junction-to-Ambient

fg

–––

50

-55 to + 150

2.5

0.02

1.6

Max.

25

20

200

±20

25

°C/W

V

A

W

°C

PD - 96158

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