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IRF8252PBF Scheda tecnica(PDF) 1 Page - International Rectifier |
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IRF8252PBF Scheda tecnica(HTML) 1 Page - International Rectifier |
1 / 9 page www.irf.com 1 07/07/08 IRF8252PbF HEXFET® Power MOSFET Notes through
are on page 9 Benefits l Very Low Gate Charge l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current l 20V VGS Max. Gate Rating l 100% tested for Rg l RoHS Compliant (Halogen Free) l Low Thermal Resistance Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters Top View 8 1 2 3 4 5 6 7 D D D D G S A S S A SO-8 Description The IRF8252PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry standard SO-8 package. The IRF8252PbF has been optimized for parameters that are critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors for notebook and Netcom applications. VDSS RDS(on) max Qg 25V 2.7m :@VGS = 10V 35nC Absolute Maximum Ratings Parameter Units VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage ID @ TA = 25°C Continuous Drain Current, VGS @ 10V ID @ TA = 70°C Continuous Drain Current, VGS @ 10V IDM Pulsed Drain Current c PD @TA = 25°C Power Dissipation PD @TA = 70°C Power Dissipation Linear Derating Factor W/°C TJ Operating Junction and TSTG Storage Temperature Range Thermal Resistance Parameter Typ. Max. Units RθJL Junction-to-Drain Lead g ––– 20 RθJA Junction-to-Ambient fg ––– 50 -55 to + 150 2.5 0.02 1.6 Max. 25 20 200 ±20 25 °C/W V A W °C PD - 96158 |
Codice articolo simile - IRF8252PBF_15 |
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Descrizione simile - IRF8252PBF_15 |
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