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IRF7807VPBF Scheda tecnica(PDF) 1 Page - International Rectifier

Il numero della parte IRF7807VPBF
Spiegazioni elettronici  N Channel Application Specific MOSFET
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Produttore elettronici  IRF [International Rectifier]
Homepage  http://www.irf.com
Logo IRF - International Rectifier

IRF7807VPBF Scheda tecnica(HTML) 1 Page - International Rectifier

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PD-95210
IRF7807VPbF
11/3/04
DEVICE CHARACTERISTICS
…
• N Channel Application Specific MOSFET
• Ideal for Mobile DC-DC Converters
• Low Conduction Losses
• Low Switching Losses
• 100% R
G Tested
• Lead-Free
Description
This new device employs advanced HEXFET Power
MOSFET technology to achieve an unprecedented
balance of on-resistance and gate charge. The
reduction of conduction and switching losses makes
it ideal for high efficiency DC-DC Converters that
power the latest generation of mobile microprocessors.
A pair of IRF7807V devices provides the best cost/
performance solution for system voltages, such as
3.3V and 5V.
Top V iew
8
1
2
3
4
5
6
7
D
D
D
D
G
S
A
S
S
SO-8
IRF7807V
RDS(on)
17 m
Ω
QG
9.5 nC
QSW
3.4 nC
QOSS
12 nC
Absolute Maximum Ratings
Symbol
Units
VDS
VGS
Continuous Drain or Source
TA = 25°C
(VGS ≥ 4.5V)
TA = 70°C
IDM
TA = 25°C
TA = 70°C
TJ , TSTG
°C
IS
ISM
Thermal Resistance
Symbol
Typ
Max
Units
RθJA
–––
50
RθJL
–––
20
A
W
A
°C/W
Parameter
Maximum Junction-to-Ambient
eh
Maximum Junction-to-Lead
h
Junction & Storage Temperature Range
Continuous Source Current (Body Diode)
Pulsed Source Current
™
Parameter
V
Power Dissipation
eÃÃÃÃÃÃÃ
Drain-Source Voltage
Gate-Source Voltage
Pulsed Drain Current
™
PD
ID
IRF7807V
8.3
2.5
66
2.5
-55 to 150
1.6
66
30
±20
6.6
HEXFET® Power MOSFET


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