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2SA1416S-TD-E Scheda tecnica(PDF) 1 Page - ON Semiconductor |
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2SA1416S-TD-E Scheda tecnica(HTML) 1 Page - ON Semiconductor |
1 / 7 page 82212 TKIM/31010EA TKIM/O3103TN (KT)/71598HA (KT)/3277KI/N255MW, TS No.2005-1/7 http://onsemi.com Semiconductor Components Industries, LLC, 2013 September, 2013 2SA1416/2SC3646 Bipolar Transistor (–)100V, (–)1A, Low VCE(sat), (PNP)NPN Single PCP Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s Specifications ( ) : 2SA1416 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (--)120 V Collector-to-Emitter Voltage VCEO (--)100 V Emitter-to-Base Voltage VEBO (--)6 V Collector Current IC (--)1 A Collector Current (Pulse) ICP (--)2 A Collector Dissipation PC 500 mW When mounted on ceramic substrate (250mm2×0.8mm) 1.3 W Junction Temperature Tj 150 °C Storage Temperature Tstg --55 to +150 °C Package Dimensions unit : mm (typ) 7007B-004 Ordering number : EN2005C Product & Package Information • Package : PCP • JEITA, JEDEC : SC-62, SOT-89, TO-243 • Minimum Packing Quantity : 1,000 pcs./reel Packing Type: TD Marking Electrical Connection TD 1 : Base 2 : Collector 3 : Emitter PCP 1.5 0.5 0.4 3.0 4.5 1.6 0.4 12 3 1.5 0.75 Top View Bottom View 2SA1416S-TD-E 2SA1416T-TD-E 2SC3646S-TD-E 2SC3646T-TD-E 2SC3646 2SA1416 RANK RANK 2 3 1 2SC3646 2 3 1 2SA1416 |
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