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IRF7483MPBF Scheda tecnica(PDF) 3 Page - International Rectifier |
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IRF7483MPBF Scheda tecnica(HTML) 3 Page - International Rectifier |
3 / 11 page IRF7483MTRPbF 3 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback May 14, 2015 D S G Dynamic @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 125 ––– ––– S VDS = 10V, ID = 81A Qg Total Gate Charge ––– 81 nC ID = 81A Qgs Gate-to-Source Charge ––– 21 ––– VDS =20V Qgd Gate-to-Drain ("Miller") Charge ––– 28 ––– VGS = 10V Qsync Total Gate Charge Sync. (Qg - Qgd) ––– 53 ––– ID = 81A, VDS =0V, VGS = 10V td(on) Turn-On Delay Time ––– 15 ––– ns VDD = 20V tr Rise Time ––– 53 ––– ID = 30A td(off) Turn-Off Delay Time ––– 39 ––– RG = 2.7 tf Fall Time ––– 25 ––– VGS = 10V Ciss Input Capacitance ––– 3913 ––– pF VGS = 0V Coss Output Capacitance ––– 642 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 431 ––– ƒ = 1.0MHz Coss eff. (ER) Effective Output Capacitance (Energy Related) ––– 765 ––– VGS = 0V, VDS = 0V to 32V Coss eff. (TR) Effective Output Capacitance (Time Related) ––– 932 ––– VGS = 0V, VDS = 0V to 32V Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current ––– ––– 74 A MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current ––– ––– 540 integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.2 V TJ= 25°C,IS = 81A, VGS = 0V dv/dt Peak Diode Recovery ––– 2.4 ––– V/ns TJ =150°C,IS = 81A, VDS = 40V trr Reverse Recovery Time ––– 38 ––– ns TJ = 25° C VR = 34V, ––– 39 ––– TJ = 125°C IF = 81A Qrr Reverse Recovery Charge ––– 42 ––– TJ = 25°C di/dt = 100A/µs ––– 46 ––– TJ = 125°C IRRM Reverse Recovery Current ––– 1.9 ––– A TJ = 25°C nC Notes: Repetitive rating; pulse width limited by max. junction temperature. Limited by TJmax, starting TJ = 25°C, L = 0.021mH RG = 50, IAS = 81A, VGS =10V. ISD ≤ 81A, di/dt ≤ 839A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C. Pulse width ≤ 400µs; duty cycle ≤ 2%. Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note # AN-994. http://www.irf.com/technical-info/appnotes/an-994.pdf R is measured at TJ approximately 90°C. This value determined from sample failure population, starting TJ = 25°C, L= 0.021mH, RG = 50, IAS = 81A, VGS =10V. Limited by TJmax, starting TJ = 25°C, L = 1mH RG = 50, IAS = 17A, VGS =10V. |
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