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IRF7380PBF Scheda tecnica(PDF) 1 Page - International Rectifier

Il numero della parte IRF7380PBF
Spiegazioni elettronici  High frequency DC-DC converters
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Produttore elettronici  IRF [International Rectifier]
Homepage  http://www.irf.com
Logo IRF - International Rectifier

IRF7380PBF Scheda tecnica(HTML) 1 Page - International Rectifier

  IRF7380PBF Datasheet HTML 1Page - International Rectifier IRF7380PBF Datasheet HTML 2Page - International Rectifier IRF7380PBF Datasheet HTML 3Page - International Rectifier IRF7380PBF Datasheet HTML 4Page - International Rectifier IRF7380PBF Datasheet HTML 5Page - International Rectifier IRF7380PBF Datasheet HTML 6Page - International Rectifier IRF7380PBF Datasheet HTML 7Page - International Rectifier IRF7380PBF Datasheet HTML 8Page - International Rectifier  
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HEXFET® Power MOSFET
l High frequency DC-DC converters
l Lead-Free
Benefits
Applications
l Low Gate to Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
Notes
 through † are on page 8
SO-8
VDSS
RDS(on) max
ID
80V
73m
:@VGS = 10V 3.6A
D1
D1
D2
D2
G1
S2
G2
S1
Top View
8
1
2
3
4
5
6
7
IRF7380PbF
1
www.irf.com © 2013 International Rectifier
September 16, 2013
Absolute Maximum Ratings
Parameter
Units
VDS
Drain-to-Source Voltage
V
VGS
Gate-to-Source Voltage
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TA = 100°C
Continuous Drain Current, VGS @ 10V
A
IDM
Pulsed Drain Current
c
PD @TA = 25°C
Maximum Power Dissipation
W
Linear Derating Factor
W/°C
dv/dt
Peak Diode Recovery dv/dt h
V/ns
TJ
Operating Junction and
°C
TSTG
Storage Temperature Range
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJL
Junction-to-Drain Lead
–––
42
°C/W
RθJA
Junction-to-Ambient (PCB Mount)
f
–––
62.5
Max.
3.6
2.9
29
80
± 20
0.02
2.3
2.0
-55 to + 150


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