 |
Motore di ricerca datesheet componenti elettronici |
|
|
Motore di ricerca datesheet componenti elettronici |
|
IRF7301PBF Scheda tecnica(PDF) 2 Page - International Rectifier |
|
||||||||||||||||||||||||||||||
IRF7301PBF Scheda tecnica(HTML) 2 Page - International Rectifier |
|
|
2 / 9 page  IRF7301PbF Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 20 V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient 0.044 V/°C Reference to 25°C, ID = 1mA 0.050 VGS = 4.5V, ID = 2.6A 0.070 VGS = 2.7V, ID = 2.2A VGS(th) Gate Threshold Voltage 0.70 V VDS = VGS, ID = 250µA gfs Forward Transconductance 8.3 S VDS = 15V, ID = 2.6A 1.0 VDS = 16V, VGS = 0V 25 VDS = 16V, VGS = 0V, TJ = 125 °C Gate-to-Source Forward Leakage 100 VGS = 12V Gate-to-Source Reverse Leakage -100 VGS = - 12V Qg Total Gate Charge 20 ID = 2.6A Qgs Gate-to-Source Charge 2.2 nC VDS = 16V Qgd Gate-to-Drain ("Miller") Charge 8.0 VGS = 4.5V, See Fig. 6 and 12 td(on) Turn-On Delay Time 9.0 VDD = 10V tr Rise Time 42 ID = 2.6A td(off) Turn-Off Delay Time 32 RG = 6.0Ω tf Fall Time 51 RD = 3.8Ω, See Fig. 10 Between lead tip and center of die contact Ciss Input Capacitance 660 VGS = 0V Coss Output Capacitance 280 pF VDS = 15V Crss Reverse Transfer Capacitance 140 = 1.0MHz, See Fig. 5 Notes: Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage 1.0 V TJ = 25°C, IS = 1.8A, VGS = 0V trr Reverse Recovery Time 29 44 ns TJ = 25°C, IF = 2.6A Qrr Reverse RecoveryCharge 22 33 nC di/dt = 100A/µs ton Forward Turn-On Time Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ISD ≤ 2.6A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C Pulse width ≤ 300µs; duty cycle ≤ 2%. Source-Drain Ratings and Characteristics Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 21 2.5 A S D G IGSS IDSS Drain-to-Source Leakage Current LS Internal Source Inductance 6.0 LD Internal Drain Inductance 4.0 nH ns nA µA Ω RDS(ON) Static Drain-to-Source On-Resistance S D G Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Surface mounted on FR-4 board, t ≤ 10sec. |
Codice articolo simile - IRF7301PBF_15 |
|
Descrizione simile - IRF7301PBF_15 |
|
|
|
Link URL |
| Privacy Policy |
| ALLDATASHEETIT.COM |
| Lei ha avuto il aiuto da alldatasheet? [ DONATE ] |
Di alldatasheet | Richest di pubblicita | contatti | Privacy Policy | scambio Link | Ricerca produttore All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
Italian ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
