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IRF7205PBF-1 Scheda tecnica(PDF) 2 Page - International Rectifier |
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IRF7205PBF-1 Scheda tecnica(HTML) 2 Page - International Rectifier |
2 / 9 page 2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback June 30, 2014 IRF7205PbF-1 Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage -30 V VGS = 0V, ID = -250µA ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient -0.024 V/°C Reference to 25°C, ID = -1mA 0.070 VGS = -10V, ID = -4.6A 0.130 VGS = -4.5V, ID = -2.0A VGS(th) Gate Threshold Voltage -1.0 -3.0 V VDS = VGS, ID = -250µA gfs Forward Transconductance 6.6 S VDS = -15V, ID = -4.6A -1.0 VDS = -24V, VGS = 0V -5.0 VDS = -15V, VGS = 0V, TJ = 70 °C Gate-to-Source Forward Leakage -100 VGS = -20V Gate-to-Source Reverse Leakage 100 VGS = 20V Qg Total Gate Charge 27 40 ID = -4.6A Qgs Gate-to-Source Charge 5.2 nC VDS = -15V Qgd Gate-to-Drain ("Miller") Charge 7.5 VGS = -10V td(on) Turn-On Delay Time 14 30 VDD = -15V tr Rise Time 21 60 ID = -1.0A td(off) Turn-Off Delay Time 97 150 RG = 6.0Ω tf Fall Time 71 100 RD = 10Ω Between lead,6mm(0.25in.) from package and center of die contact Ciss Input Capacitance 870 VGS = 0V Coss Output Capacitance 720 pF VDS = -10V Crss Reverse Transfer Capacitance 220 = 1.0MHz Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage -1.2 V TJ = 25°C, IS = -1.25A, VGS = 0V trr Reverse Recovery Time 70 100 ns TJ = 25°C, IF = -4.6A Qrr Reverse RecoveryCharge 100 180 nC di/dt = 100A/µs ton Forward Turn-On Time Source-Drain Ratings and Characteristics Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) -15 -2.5 A IGSS IDSS Drain-to-Source Leakage Current LS Internal Source Inductance 4.0 LD Internal Drain Inductance 2.5 nH ns nA µA Ω RDS(ON) Static Drain-to-Source On-Resistance Notes: Repetitive rating; pulse width limited by max. junction temperature. ISD ≤ -4.6A, di/dt ≤ 90A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C Pulse width ≤ 300µs; duty cycle ≤ 2%. Surface mounted on FR-4 board, t ≤ 10sec. S D G S D G |
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