IRF6898MPBF_15 datasheet(1/9 Pages) IRF

Il numero della parte	IRF6898MPBF

Spiegazioni elettronici	Integrated Monolithic Schottky Diode

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Produttore elettronici	IRF [International Rectifier]

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HEXFET Power MOSFET plus Schottky Diode

Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)

Fig 1. Typical On-Resistance vs. Gate Voltage

Typical values (unless otherwise specified)

Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage

Click on this section to link to the appropriate technical paper.

Click on this section to link to the DirectFET Website.

Surface mounted on 1 in. square Cu board, steady state.

TC measured with thermocouple mounted to top (Drain) of part.

Repetitive rating; pulse width limited by max. junction temperature.

Starting TJ= 25°C, L = 1.21mH, RG= 50Ω, IAS= 28A.

Notes:

DirectFET

ISOMETRIC

MX

l RoHs Compliant Containing No Lead and Bromide

l Integrated Monolithic Schottky Diode

l Low Profile (<0.7 mm)

lDual Sided Cooling Compatible

l Low Package Inductance

l Optimized for High Frequency Switching

l Ideal for CPU Core DC-DC Converters

l Optimized for Sync. FET socket of Sync. Buck Converter

l Low Conduction and Switching Losses

l Compatible with existing Surface Mount Techniques

l 100% Rg tested

SQ

SX

ST

MQ

MX

MT

MP

Description

The IRF6898MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve

the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible

with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering

techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual

sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.

The IRF6898MPbF balances industry leading on-state resistance while minimizing gate charge along with low gate resistance to reduce both

conduction and switching losses. This part contains an integrated Schottky diode to reduce the Qrr of the body drain diode further reducing

the losses in a Synchronous Buck circuit. The reduced losses make this product ideal for high frequency/high efficiency DC-DC converters

that power high current loads such as the latest generation of microprocessors. The IRF6898MPbF has been optimized for parameters that

are critical in synchronous buck converter’s Sync FET sockets.

DD

G

S

VDSS

VGS

RDS(on)

25V max ±16V max 0.8mΩ@ 10V 1.2mΩ@ 4.5V

2

4

6

8

10

12

14

16

VGS, Gate -to -Source Voltage (V)

0.0

1.0

2.0

3.0

ID = 35A

TJ = 25°C

TJ = 125°C

Absolute Maximum Ratings

Parameter

Units

VDS

Drain-to-Source Voltage

V

VGS

Gate-to-Source Voltage

ID @ TA = 25°C

Continuous Drain Current, VGS @ 10V e

ID @ TA = 70°C

Continuous Drain Current, VGS @ 10V e

A

ID @ TC = 25°C

Continuous Drain Current, VGS @ 10V f

IDM

Pulsed Drain Current

g

EAS

Single Pulse Avalanche Energy

h

mJ

IAR

Avalanche Current

Ãg

A

28

473

Max.

28

213

280

±16

25

35

0

20406080

100

120

QG Total Gate Charge (nC)

0

2

4

6

8

10

12

14

VDS= 20V

VDS= 13V

ID= 28A

IRF6898MPbF

IRF6898MTRPbF

Qg tot

Qgd

Qgs2

Qrr

Qoss Vgs(th)

41nC

15nC

4.7nC

66nC

43nC

1.6V

1

www.irf.com

March 21, 2013

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