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IRF5805PBF Scheda tecnica(PDF) 1 Page - International Rectifier

Il numero della parte IRF5805PBF
Spiegazioni elettronici  Ultra Low On-Resistance
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Produttore elettronici  IRF [International Rectifier]
Homepage  http://www.irf.com
Logo IRF - International Rectifier

IRF5805PBF Scheda tecnica(HTML) 1 Page - International Rectifier

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HEXFET® Power MOSFET
04/20/10
IRF5805PbF
Absolute Maximum Ratings
www.irf.com
1
Thermal Resistance
Parameter
Max.
Units
VDS
Drain-Source Voltage
-30
V
ID @ TA = 25°C
Continuous Drain Current, VGS @ -10V
-3.8
ID @ TA = 70°C
Continuous Drain Current, VGS @ -10V
-3.0
A
IDM
Pulsed Drain Current

-15
PD @TA = 25°C
Maximum Power Dissipation
ƒ
2W
PD @TA = 70°C
Maximum Power Dissipation
ƒ
1.28
W
Linear Derating Factor
0.02
W/°C
VGS
Gate-to-Source Voltage
± 20
V
TJ , TSTG
Junction and Storage Temperature Range
-55 to + 150
°C
Description
VDSS
RDS(on) max
ID
-30V
0.098@VGS = -10V
-
3.8A
0.165@VGS = -4.5V
-
3.0A
Parameter
Max.
Units
RθJA
Maximum Junction-to-Ambient
ƒ
62.5
°C/W
Top View
1
2
D
G
A
D
D
D
S
3
4
5
6
These P-channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This
benefit provides the designer with an extremely efficient
device for use in battery and load management
applications.
The TSOP-6 package with its customized leadframe
produces a HEXFET® power MOSFET with RDS(on)
60% less than a similar size SOT-23. This package is
ideal for applications where printed circuit board space
is at a premium. It's unique thermal design and RDS(on)
reduction enables a current-handling increase of nearly
300% compared to the SOT-23.
l Ultra Low On-Resistance
l P-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l Low Gate Charge
l Lead-Free
l Halogen-Free
TSOP-6
PD -95340A


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