KML0D4N20E datasheet(1/4 Pages) KEC

Il numero della parte	KML0D4N20E

Spiegazioni elettronici	N-Ch Trench MOSFET

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Produttore elettronici	KEC [KEC(Korea Electronics)]

Homepage	http://www.keccorp.com

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2014. 4. 17

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SEMICONDUCTOR

TECHNICAL DATA

KML0D4N20E

N-Ch Trench MOSFET

Revision No : 2

General Description

It s mainly suitable for Load Switching Mobile Phones, Battery Powered

Systems and Level-Shifter.

FEATURES

・V

DSS=20V, ID=0.4A

・Drain-Soure ON Resistance

: RDS(ON)=0.70Ω @ VGS=4.5V

: RDS(ON)=0.85Ω @ VGS=2.5V

: RDS(ON)=1.25Ω @ VGS=1.8V

・Super High Dense Cell Design

MAXIMUM RATING (Ta=25

℃)

Note 1) Drain current limited by maximum junction temperature.

Note 2) Surface Mounted on 1

˝×1˝ FR4 Board.

CHARACTERISTIC

SYMBOL

N-Ch

UNIT

Drain-Source Voltage

VDSS

20

V

Gate-Source Voltage

VGSS

±6

V

Drain Current

DC @TA=25℃

(Note 1)

ID

400

mA

DC @TA=85℃

(Note 1)

330

Pulsed

(Note 1)

IDP

1600

Drain Power Dissipation

(Note 2)

PD

210

mW

Maximum Junction Temperature

Tj

150

℃

Storage Temperature Range

Tstg

-55

～150

℃

Thermal Resistance, Junction to Ambient (Note 2)

RthJA

600

℃/W

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