KMB7D0DN40QB datasheet(2/5 Pages) KEC

Il numero della parte	KMB7D0DN40QB

Spiegazioni elettronici	Dual N-Ch Trench MOSFET

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Produttore elettronici	KEC [KEC(Korea Electronics)]

Homepage	http://www.keccorp.com

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2 / 5 page

2012. 1. 13

2/5

KMB7D0DN40QB

Revision No : 0

ELECTRICAL CHARACTERISTICS (Ta=25

℃) UNLESS OTHERWISE NOTED

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Static

Drain to Source Breakdown Voltage

BVDSS

ID=250μ

A, VGS=0V

40

-

V

Drain Cut-off Current

IDSS

VDS=40V, VGS=0V

-

1

μA

Gate to Source Leakage Current

IGSS

VGS=±20V, VDS=0V

-

±100

nA

Gate to Source Threshold Voltage

Vth

VDS=VGS, ID=250μ

A

1

1.8

2.5

V

Drain to Source on Resistance

RDS(ON)

VGS=10V, ID=7A

(Note2)

-

20

25

m

Ω

VGS=4.5V, ID=7A

(Note2)

-

35

45

On-State Drain Current

ID(ON)

VDS=5V, VGS=10V

(Note2)

15

-

A

Forward Transconductance

gfs

VDS=5V, ID=3.5A

(Note2)

-

11

-

S

Dynamic

Input Capaclitance

Ciss

VDS=20V, f=1MHz, VGS=0V

-

560

-

pF

Ouput Capacitance

Coss

-

105

-

Reverse Transfer Capacitance

Crss

-

55

-

Total Gate Charge

Qg

VDS=20V, VGS=4.5V, ID=7A

(Note2)

-

7.8

-

nC

Gate to Source Charge

Qgs

-

4.0

-

Gate to Drain Charge

Qgd

-

2.6

-

Turn-On Delay Time

td(on)

VDD=20V, VGS=10V

ID=7A, RG=3.3Ω

(Note2)

-

13

-

ns

Turn-On Rise Time

tr

-

11

-

Turn-Off Delay Time

td(off)

-

26

-

Turn-Off Fall Time

tf

-

11

-

Source to Drain Diode Ratings

Source to Drain Forward Voltage

VSD

IS=7A, VGS=0V

(Note2)

-

0.85

1.2

V

Note2) Pulse Test : Pulse width

≤ 10㎲ , Duty cycle ≤ 1%

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