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KMA2D4P20SA Scheda tecnica(PDF) 1 Page - KEC(Korea Electronics) |
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KMA2D4P20SA Scheda tecnica(HTML) 1 Page - KEC(Korea Electronics) |
1 / 4 page 2011. 12. 22 1/4 SEMICONDUCTOR TECHNICAL DATA KMA2D4P20SA P-Ch Trench MOSFET Revision No : 3 General Description It s mainly suitable for use as a load switch in battery powered applications. FEATURES ・V DSS=-20V, ID=-2.4A. ・Drain to Source on-state Resistance. : RDS(ON)=100mΩ(Max.) @ VGS=-4.5V. : RDS(ON)=175mΩ(Max.) @ VGS=-2.5V. MAXIMUM RATING (Ta=25 ℃) DIM MILLIMETERS SOT-23 A B C D E 2.93 0.20 1.30+0.20/-0.15 0.40+0.15/-0.05 2.40+0.30/-0.20 G 1.90 H J K L M N 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 Q 0.1 MAX 0.20 MIN 1.00+0.20/-0.10 M E 1 2 3 B 1.30 MAX LL PP P7 + _ Q Type Name Lot No. KB2 Marking Note1)Surface Mounted on 1 ”×1”FR4 Board, t≤5sec. PIN CONNECTION (TOP VIEW) 2 3 1 GS D 1 2 3 CHARACTERISTIC SYMBOL RATING UNIT Drain to Source Voltage VDSS -20 V Gate to Source Voltage VGSS ±12 V Drain Current DC@Ta=25 ℃(Note1) ID -2.4 A Pulsed (Note1) IDP -9 Drain Power Dissipation Ta=25 ℃ (Note1) PD 1.25 W Ta=100 ℃ (Note1) 0.6 Maximum Junction Temperature Tj 150 ℃ Storage Temperature Range Tstg -55 ~150 ℃ Thermal Resistance, Junction to Ambient (Note1) RthJA 100 ℃/W |
Codice articolo simile - KMA2D4P20SA_15 |
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Descrizione simile - KMA2D4P20SA_15 |
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