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KF7N50P Scheda tecnica(PDF) 2 Page - KEC(Korea Electronics) |
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KF7N50P Scheda tecnica(HTML) 2 Page - KEC(Korea Electronics) |
2 / 7 page 2011. 6. 23 2/2 KF7N50P/F Revision No : 0 ELECTRICAL CHARACTERISTICS (Tc=25 ℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage BVDSS ID=250μA, VGS=0V 500 - - V Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTj ID=250μA, Referenced to 25℃ - 0.5 - V/ ℃ Drain Cut-off Current IDSS VDS=500V, VGS=0V, - - 10 μA Gate Threshold Voltage Vth VDS=VGS, ID=250μA 2.5 - 4.5 V Gate Leakage Current IGSS VGS=±30V, VDS=0V - - ±100 nA Drain-Source ON Resistance RDS(ON) VGS=10V, ID=3.5A - 0.83 1.0 Ω Dynamic Total Gate Charge Qg VDS=400V, ID=7A VGS=10V (Note4,5) - 16 - nC Gate-Source Charge Qgs - 3.5 - Gate-Drain Charge Qgd - 6.0 - Turn-on Delay time td(on) VDD=200V, ID=7A RG=25Ω (Note4,5) VGS=10V - 20 - ns Turn-on Rise time tr - 25 - Turn-off Delay time td(off) - 50 - Turn-off Fall time tf - 25 - Input Capacitance Ciss VDS=25V, VGS=0V, f=1.0MHz - 710 - pF Output Capacitance Coss - 95 - Reverse Transfer Capacitance Crss - 8.5 - Source-Drain Diode Ratings Continuous Source Current IS VGS<Vth - - 7 A Pulsed Source Current ISP - - 28 Diode Forward Voltage VSD IS=7A, VGS=0V - - 1.4 V Reverse Recovery Time trr IS=7A, VGS=0V, dIs/dt=100A/ μs - 310 - ns Reverse Recovery Charge Qrr - 2.7 - μC Note 1) Repetivity rating : Pulse width limited by junction temperature. Note 2) L = 7.0mH, IS=7A, VDD=50V, RG = 25Ω, Starting Tj = 25℃. Note 3) IS ≤7A, dI/dt≤100A/㎲, VDD≤BVDSS, Starting Tj = 25℃. Note 4) Pulse Test : Pulse width ≤ 300㎲, Duty Cycle ≤ 2%. Note 5) Essentially independent of operating temperature. Marking |
Codice articolo simile - KF7N50P_15 |
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Descrizione simile - KF7N50P_15 |
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