2012. 8. 10

2/6

KF3N80D/I

Revision No : 0

2

PRODUCT NAME

LOT NO

1

001

2

KF3N80

D

1

001

2

KF3N80

I

1

Marking

ELECTRICAL CHARACTERISTICS (Tc=25

℃)

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

800

-

-

V

Breakdown Voltage Temperature Coefficient

ΔBV

-

0.8

-

V/

℃

Drain Cut-off Current

-

-

10

μA

Gate Threshold Voltage

2.5

-

4.5

V

Gate Leakage Current

-

-

±100

nA

Drain-Source ON Resistance

-

3.4

4.2

Ω

Dynamic

Total Gate Charge

(Note4,5)

-

12

-

nC

Gate-Source Charge

-

6

-

Gate-Drain Charge

-

2

-

Turn-on Delay time

(Note4,5)

-

25

-

ns

Turn-on Rise time

-

27

-

Turn-off Delay time

-

60

-

Turn-off Fall time

-

30

-

Input Capacitance

-

520

-

pF

Output Capacitance

-

60

-

Reverse Transfer Capacitance

-

9

-

Source-Drain Diode Ratings

Continuous Source Current

-

-

3

A

Pulsed Source Current

-

-

12

Diode Forward Voltage

-

-

1.4

V

Reverse Recovery Time

dIs/dt=100A/us

-

450

-

ns

Reverse Recovery Charge

-

3.0

-

μC

Note 1) Repetivity rating : Pulse width limited by junction temperature.

Note 4) Pulse Test : Pulse width

≤ 300㎲, Duty Cycle ≤ 2%.

Note 5) Essentially independent of operating temperature.