2N5060 THRU 2N5064

SILICON CONTROLLED RECTIFIERS

0.8 AMP, 30 THRU 200 VOLT

The CENTRAL SEMICONDUCTOR 2N5060 series

devices are epoxy molded SCRs designed for control

systems and sensing circuit applications.

MARKING: FULL PART NUMBER

MAXIMUM RATINGS: (TA=25°C unless otherwise noted)

SYMBOL

2N5060 2N5061 2N5062 2N5063 2N5064 UNITS

Peak Repetitive Off-State Voltage

VDRM, VRRM

30

60

100

150

200

V

RMS On-State Current (Note 1; TC=80°C)

IT(RMS)

0.8

A

Average On-State Current (Note 1; TC=67°C)

IT(AV)

0.51

A

Average On-State Current (Note 1; TC=102°C)

IT(AV)

0.255

A

Peak One Cycle Surge Current (60Hz)

ITSM

10

A

0.4

Peak Forward Gate Power (tp<1.0μs)

PGM

0.1

W

Average Forward Gate Power (t=8.3ms)

PG(AV)

0.01

W

Peak Forward Gate Current (tp<1.0μs)

IGM

1.0

A

Peak Reverse Gate Voltage (tp<1.0μs)

VRGM

5.0

V

Operating Junction Temperature

TJ

-40 to +125

°C

Storage Temperature

Tstg

-40 to +150

°C

Thermal Resistance (Note 2)

ΘJC

75

°C/W

Thermal Resistance

ΘJA

200

°C/W

Notes: 1) 180° Conduction Angles

2) Measured with the “flat side down” on a heatsink and held in position by a metal clamp over the curved surface.

ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

IDRM, IRRM VD=Rated VDRM, RGK=1.0kΩ

10

μA

IDRM, IRRM VD=Rated VDRM, RGK=1.0kΩ, TC=110°C

50

μA

IGT

VD=7.0V, RL=100Ω

200

μA

IGT

VD=7.0V, RL=100Ω, TC=-40°C

350

μA

IH

Initiating Current, IT=20mA, RGK=1.0kΩ

5.0

mA

IH

Initiating Current, IT=20mA, RGK=1.0kΩ, TC=-40°C

10

mA

VGT

VD=7.0V, RL=100Ω

0.8

V

VGT

VD=7.0V, RL=100Ω, TC=-40°C

1.2

V

VGD

VD=Rated VDRM, RL=100Ω, TC=110°C

0.1

V

VTM

ITM=1.2A, TA=25°C

1.7

V

dv/dt

VD=Rated VDRM, RGK=1.0kΩ

30

V/μs

TO-92 CASE

R5 (7-May 2015)

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