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STU606S Scheda tecnica(PDF) 1 Page - SamHop Microelectronics Corp. |
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STU606S Scheda tecnica(HTML) 1 Page - SamHop Microelectronics Corp. |
1 / 8 page S mHop Microelectronics C orp. a STU/D606S PRODUCT SUMMARY VDSS ID RDS(ON) (m Ω) Max 60V 21A 68 @ VGS=4.5V 56 @ VGS=10V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. N-Channel Logic Level Enhancement Mode Field Effect Transistor Ver 1.2 www.samhop.com.tw Dec,03,2012 1 Details are subject to change without notice. G S STU SERIES TO - 252AA( D- PAK ) G S D STD SERIES TO - 251( I - PAK ) Symbol VDS VGS IDM A ID Units Parameter 60 21 61 V V ±20 Gate-Source Voltage Drain-Source Voltage ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Limit Drain Current-Continuous -Pulsed b A TC=25°C W PD °C 50 -55 to 150 TC=25°C THERMAL CHARACTERISTICS Maximum Power Dissipation Operating Junction and Storage Temperature Range TJ, TSTG 50 °C/W Thermal Resistance, Junction-to-Ambient R JA 2.5 °C/W Thermal Resistance, Junction-to-Case R JC TC=70°C A EAS mJ Sigle Pulse Avalanche Energy d TC=70°C W a 16.8 32 25 Green Product |
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