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CXT7820 Scheda tecnica(PDF) 1 Page - Central Semiconductor Corp |
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CXT7820 Scheda tecnica(HTML) 1 Page - Central Semiconductor Corp |
1 / 2 page CXT7820 SURFACE MOUNT VERY LOW VCE(SAT) PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT7820 is a very low VCE(SAT) PNP transistor designed for applications where electrical and thermal efficiency are prime requirements. Packaged in an industry standard SOT-89 case, this device brings updated electrical specifications and characteristics suitable for the most demanding designs. MARKING: FULL PART NUMBER FEATURES: • High Current (IC=1.0A) • VCE(SAT)=0.34V MAX @ IC=1.0A • SOT-89 surface mount package • Complementary NPN device: CXT3820 APPLICATIONS: • DC/DC Converters • Voltage Clamping • Protection Circuits • Battery powered Cell Phones, Pagers, Digital Cameras, PDAs, Laptops, etc. MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage VCEO 60 V Emitter-Base Voltage VEBO 5.0 V Continuous Collector Current IC 1.0 A Peak Collector Current ICM 2.0 A Continuous Base Current IB 300 mA Power Dissipation PD 1.2 W Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C Thermal Resistance ΘJA 104 °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS ICBO VCB=60V 100 nA IEBO VEB=5.0V 100 nA BVCBO IC=100µA 80 V BVCEO IC=10mA 60 V BVEBO IE=100µA 5.0 V VCE(SAT) IC=100mA, IB=1.0mA 0.175 V VCE(SAT) IC=500mA, IB=50mA 0.18 V VCE(SAT) IC=1.0A, IB=100mA 0.34 V VBE(SAT) IC=1.0A, IB=50mA 1.1 V VBE(ON) VCE=5.0V, IC=1.0A 0.9 V hFE VCE=5.0V, IC=1.0mA 200 hFE VCE=5.0V, IC=500mA 150 hFE VCE=5.0V, IC=1.0A 100 fT VCE=10V, IC=50mA 150 MHz Cob VCB=10V, IE=0, f=1.0MHz 15 pF SOT-89 CASE R1 (23-February 2010) www.centra lsemi.com • Device is Halogen Free by design |
Codice articolo simile - CXT7820_15 |
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Descrizione simile - CXT7820_15 |
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