STBP60L60 datasheet(3/8 Pages) SAMHOP

Il numero della parte	STBP60L60

Spiegazioni elettronici	Super high dense cell design for extremely low RDS(ON).

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Produttore elettronici	SAMHOP [SamHop Microelectronics Corp.]

Homepage	http://www.samhop.com.tw

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3 / 8 page

STB/P60L60

Ver 2.0

www.samhop.com.tw

Sep,14,2010

3

T j ( °C )

VDS, Drain-to-Source Voltage(V)

Figure 1. Output Characteristics

VGS, Gate-to-Source Voltage(V)

Figure 2. Transfer Characteristics

ID, Drain Current(A)

Tj, Junction Temperature(° C )

Figure 3. On-Resistance vs. Drain Current

Figure 4. On-Resistance Variation with Drain

Tj, Junction Temperature(° C )

Figure 5. Gate Threshold Variation

Tj, Junction Temperature(° C )

Figure 6. Breakdown Voltage Variation

and Gate Voltage

Current and Temperature

with Temperature

VGS =10V

0.5

1.0

1.5

2.0

2.5

3.0

VGS =4V

VGS =5V

VGS =6V

48

36

24

12

0

60

T j=125 C

0.0

1.2

2.4

3.6

4.8

6.0

7.2

25 C

-55 C

60

50

40

30

20

10

1

12

24

36

48

60

1

V GS =10V

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0

25

50

75

150

100

125

V G S =10V

ID=25A

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

-50 -25

0

25

50

75

100 125 150

V DS =V GS

ID=250uA

-50

-25

0

25

50

75

100 125 150

1.4

1.3

1.2

1.1

1.0

0.9

0.8

ID=250uA

0

12

24

36

48

60

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