1N4448HWSQ-7-F datasheet(2/4 Pages) DIODES

Il numero della parte	1N4448HWSQ-7-F

Spiegazioni elettronici	SURFACE MOUNT FAST SWITCHING DIODE

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Produttore elettronici	DIODES [Diodes Incorporated]

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1N4448HWS

Document number: DS30196 Rev. 12 - 2

2 of 4

www.diodes.com

September 2013

1N4448HWS

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Max

Unit

Test Condition

Reverse Breakdown Voltage (Note 6)

VBR(R)

80



V

IR = 100A

Forward Voltage

VFM

0.62



0.72

0.855

1.0

1.25

V

IF = 5.0mA

IF = 10mA

IF = 100mA

IF = 150mA

Peak Reverse Current (Note 6)

IRM



100

50

30

25

nA

μA

nA

VR = 80V

VR = 75V, TJ = +150°C

VR = 25V, TJ = +150°C

VR = 20V

Total Capacitance

CT



3.5

pF

VR = 0, f = 1.0MHz

Reverse Recovery Time

trr



4.0

ns

IF = IR = 10mA,

Irr = 0.1 x IR, RL = 100Ω

Notes:

5. Part mounted on FR-4 PC board with recommended pad layout, which can be found on our website at http://www.diodes.com.

6. Short duration pulse test used to minimize self-heating effect.

0

100

300

025

50

75

125

150

T , AMBIENT TEMPERATURE ( C)

Fig. 1 Power Derating Curve

A

°

200

175

Note 5

0.1

1

10

100

1000

0

200

400

600

800 1000 1200 1400 1600

Figure 2 Typical Forward Characteristics

V , INSTANTANEOUS FORWARD VOLTAGE (mV)

F

T = 85°C

A

T = 125°C

A

T = 150°C

A

T = -55°C

A

T = 25°C

A

0.10

1.0

10.0

0.01

0.001

0

20

40

60

80

V , INSTANTANEOUS REVERSE VOLTAGE (V)

Fig. 3 Typical Reverse Characteristics

R

T = 100 C

A

°

T = 0 C

A

°

T = 75 C

A

°

T = 50 C

A

°

T = 25 C

A

°

T = -30 C

A

°

04

3

25

16

V , DC REVERSE VOLTAGE (V)

Fig. 4 Total Capacitance vs. Reverse Voltage

R

0

1

2

3

4

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