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SI7157DP Scheda tecnica(PDF) 2 Page - Vishay Siliconix |
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SI7157DP Scheda tecnica(HTML) 2 Page - Vishay Siliconix |
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2 / 14 page  Vishay Siliconix Si7157DP www.vishay.com 2 Document Number: 62860 S13-1665-Rev. A, 29-Jul-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 For technical questions, contact: pmostechsupport@vishay.com Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 20 V VDS Temperature Coefficient V DS/TJ ID = - 250 µA - 14.5 mV/°C VGS(th) Temperature Coefficient V GS(th)/TJ 4.1 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 0.5 - 1.4 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 12 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 20 V, VGS = 0 V - 1 µA VDS = - 20 V, VGS = 0 V, TJ = 55 °C - 5 On-State Drain Currenta ID(on) VDS - 10 V, VGS = - 10 V - 40 A Drain-Source On-State Resistancea RDS(on) VGS = - 10 V, ID = - 25 A 0.00125 0.00160 VGS = - 4.5 V, ID = - 20 A 0.00155 0.00200 VGS = - 2.5 V, ID = - 15 A 0.00240 0.00320 Forward Transconductancea gfs VDS = - 10 V, ID = - 25 A 120 S Dynamicb Input Capacitance Ciss VDS = - 10 V, VGS = 0 V, f = 1 MHz 22 000 pF Output Capacitance Coss 2470 Reverse Transfer Capacitance Crss 2515 Total Gate Charge Qg VDS = - 10 V, VGS = - 10 V, ID = - 20 A 415 625 nC VDS = - 10 V, VGS = - 4.5 V, ID = - 20 A 202.5 305 Gate-Source Charge Qgs 32.5 Gate-Drain Charge Qgd 51.5 Gate Resistance Rg f = 1 MHz 0.8 1.5 2.5 Turn-On Delay Time td(on) VDD = - 10 V, RL = 1 ID - 10 A, VGEN = - 10 V, Rg = 1 20 40 ns Rise Time tr 14 28 Turn-Off DelayTime td(off) 220 400 Fall Time tf 55 110 Turn-On Delay Time td(on) VDD = - 10 V, RL = 1 ID - 10 A, VGEN = - 4.5 V, Rg = 1 115 200 Rise Time tr 120 220 Turn-Off DelayTime td(off) 230 390 Fall Time tf 75 150 Drain-Source Body Diode Characteristics Continous Source-Drain Diode Current IS TC = 25 °C - 60 A Pulse Diode Forward Current (tp = 100 µs) ISM - 300 Body Diode Voltage VSD IS = - 5 A, VGS = 0 V - 0.64 - 1.1 V Body Diode Reverse Recovery Time trr IF = - 10 A, dI/dt = 100 A/µs, TJ = 25 °C 88 140 ns Body Diode Reverse Recovery Charge Qrr 120 200 nC Reverse Recovery Fall Time ta 31 ns Reverse Recovery Rise Time tb 57 |
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