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TSF30H60C Scheda tecnica(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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TSF30H60C Scheda tecnica(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
1 / 4 page - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Low power loss/ high efficiency - High forward surge capability Packing code with suffix "G" means green compund (halogen-free) Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 2 whisker test SYMBOL UNIT VRRM V dV/dt V/μs VAC V IF = 5A IF = 7.5A IF = 15A IF = 5A IF = 7.5A IF = 15A TJ = 25°C μA TJ = 125°C mA RθJC OC/W TJ OC TSTG OC Version: C14 - Halogen-free according to IEC 61249-2-21 definition TYPICAL APPLICATIONS Trench Schottky barrier rectifier are designed for high frequency miniature switched mode power supplies such as adapters, lighting and on-board DC/DC converters. MECHANICAL DATA Case: ITO-220AB TSF30H60C Maximum repetitive peak reverse voltage Maximum average forward rectified current Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC 60 Voltage rate of change (Rated VR) 10000 Molding compound meets UL 94 V-0 flammability rating Polarity: As marked Mounting torque: 0.56 Nm max. Weight: 1.7 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) A PARAMETER A per diode 15 Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load per diode IFSM 170 per device IF(AV) 30 TJ = 125°C 4.5 - VF V Isolation voltage from terminal to heatsink t = 1 min 1500 Min. Typ. - - - Note 1: Pulse Test with Pulse Width=300μs, 1% Duty Cycle Instantaneous reverse current per diode at rated reverse voltage IR Typical thermal resistance per diode TJ = 25°C Operating junction temperature range - 55 to +150 Storage temperature range - 55 to +150 0.45 0.48 0.55 Instantaneous forward voltage per diode ( Note1 ) - TSF30H60C - ITO-220AB Max. 0.36 - - - - 10 500 45 0.70 - - - 0.41 0.52 15 |
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