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SB20H150CT-1 Scheda tecnica(PDF) 2 Page - Vishay Siliconix |
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SB20H150CT-1 Scheda tecnica(HTML) 2 Page - Vishay Siliconix |
2 / 7 page MBR20H150CT, MBRF20H150CT, SB20H150CT-1 www.vishay.com Vishay General Semiconductor Revision: 13-Aug-13 2 Document Number: 88864 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle Note (1) AEC-Q101 qualified RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Fig. 1 - Forward Derating Curve (Total) Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Per Diode ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT Maximum instantaneous forward voltage per diode IF = 10 A TC = 25 °C VF (1) 0.90 V IF = 10 A TC = 125 °C 0.75 IF = 20 A TC = 25 °C 0.99 IF = 20 A TC = 125 °C 0.86 Maximum reverse current per diode at working peak reverse voltage TJ = 25 °C IR (1) 5.0 μA TJ = 125 °C 1.0 mA THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL MBR MBRF MBRB UNIT Typical thermal resistance per diode RJC 2.2 4.2 2.2 °C/W ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB MBR20H150CT-E3/45 2.06 45 50/tube Tube ITO-220AB MBRF20H150CT-E3/45 2.20 45 50/tube Tube TO-262AA SB20H150CT-1E3/45 1.58 45 50/tube Tube 0 5 10 15 20 25 30 25 50 75 100 125 150 175 MBRF MBR, MBRB Case Temperature (°C) 0 20 40 60 80 100 120 140 160 180 200 220 240 260 10 1 100 T J = TJ Max. 8.3 ms Single Half Sine-Wave Number of Cycles at 60 Hz |
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