2SC4228_15 datasheet(5/9 Pages) RENESAS

Il numero della parte	2SC4228

Spiegazioni elettronici	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD

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Data Sheet PU10452EJ01V0DS

3

2SC4228

TYPICAL CHARACTERISTICS (TA = +25

°C, unless otherwise specified)

Collector to Emitter Voltage VCE (V)

COLLECTOR CURRENT vs.

COLLECTOR TO EMITTER VOLTAGE

25

10

5

15

20

0

0.5

1

40 A

µ

60 A

µ

80 A

µ

100 A

µ

120 A

µ

140

A

µ

160

A

µ

IB = 20 A

µ

VCE = 3 V

200

50

100

10

20

15

10

0.5

50

Collector Current IC (mA)

COLLECTOR CURRENT

DC CURRENT GAIN vs.

VCE = 3 V

f = 2 GHz

Collector Current IC (mA)

vs. COLLECTOR CURRENT

GAIN BANDWIDTH PRODUCT

10

8

6

4

2

0

510

0.5

1

50

250

200

150

100

50

0

25

50

75

100

125

150

Ambient Temperature TA (˚C)

TOTAL POWER DISSIPATION

vs. AMBIENT TEMPERATURE

Free Air

Collector to Base Voltage VCB (V)

vs. COLLECTOR TO BASE VOLTAGE

REVERSE TRANSFER CAPACITANCE

5

0.2

0.5

1

2

0.1

2

1

5

10

20

50

f = 1 MHz

VCE = 3 V

20

10

0

0.5

1

Base to Emitter Voltage VBE (V)

COLLECTOR CURRENT vs.

BASE TO EMITTER VOLTAGE

Remark The graphs indicate nominal characteristics.

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