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UF2820P Scheda tecnica(PDF) 1 Page - M/A-COM Technology Solutions, Inc.

Il numero della parte UF2820P
Spiegazioni elettronici  RF Power MOSFET Transistor
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Produttore elettronici  MA-COM [M/A-COM Technology Solutions, Inc.]
Homepage  http://www.macomtech.com
Logo MA-COM - M/A-COM Technology Solutions, Inc.

UF2820P Scheda tecnica(HTML) 1 Page - M/A-COM Technology Solutions, Inc.

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RF Power MOSFET Transistor
20W, 100-500 MHz, 28V
M/A-COM Products
Released; RoHS Compliant
UF2820P
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
Features
N-channel enhancement mode device
DMOS structure
Lower capacitances for broadband operation
Common source configuration
Lower noise floor
ABSOLUTE MAXIMUM RATINGS AT 25° C
Parameter
Rating
Drain-Source Voltage
65
Gate-Source Voltage
20
Drain-Source Current
2.8
Power Dissipation
53
Junction Temperature
200
Storage Temperature
-55 to 150
Thermal Resistance
3.3
Symbol
VDS
VGS
IDS
PD
TJ
TSTG
θJC
Units
V
V
A
W
°C
°C
°C/W
ELECTRICAL CHARACTERISTICS AT 25°C
Parameter
Symbol
Min
Max
Units
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
65
-
V
VGS = 0.0 V , IDS = 4.0 mA
Drain-Source Leakage Current
IDSS
-
2.0
mA
VGS = 28.0 V , VGS = 0.0 V
Gate-Source Leakage Current
IGSS
-
2.0
µA
VGS = 20.0 V , VDS = 0.0 V
Gate Threshold Voltage
VGS(TH)
2.0
6.0
V
VDS = 10.0 V , IDS = 200.0 mA
Forward Transconductance
GM
.160
-
S
VDS = 10.0 V , IDS 200.0 mA , Δ VGS = 1.0V, 80 μs Pulse
Input Capacitance
CISS
-
14
pF
VDS = 28.0 V , F = 1.0 MHz
Output Capacitance
COSS
-
10
pF
VDS = 28.0 V , F = 1.0 MHz
Reverse Capacitance
CRSS
-
4.8
pF
VDS = 28.0 V , F = 1.0 MHz
Power Gain
GP
10
-
dB
VDD = 28.0 V, IDQ = 200.0 mA, POUT = 20.0 W F =500 MHz
Drain Efficiency
ŋD
50
-
%
VDD = 28.0 V, IDQ = 200.0 mA, POUT = 20.0 W F =500 MHz
Load Mismatch Tolerance
VSWR-T
-
20:1
-
VDD = 28.0 V, IDQ = 200.0 mA, POUT = 20.0 W F =500 MHz
F (MHz)
ZIN (Ω)
ZLOAD (Ω)
100
9.5-j60.0
4.0+j68.0
300
5.0-j35.0
40.0+j48.0
500
2.0-j22.0
36.0+j34.0
VDD=28V, IDQ=200 mA, POUT =20.0 W
TYPICAL DEVICE IMPEDANCES
ZIN is the series equivalent input impedance of the device from
gate to source.
ZLOAD is the optimum series equivalent load impedance as
measured from drain to ground.
Package Outline


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