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IRFP350LC Scheda tecnica(PDF) 1 Page - International Rectifier |
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IRFP350LC Scheda tecnica(HTML) 1 Page - International Rectifier |
1 / 8 page IRFP350LC HEXFET® Power MOSFET PD - 9.1229 Revision 0 VDSS = 400V RDS(on) = 0.30Ω ID = 16A Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, V GS @ 10V 16 ID @ TC = 100°C Continuous Drain Current, V GS @ 10V 9.9 A IDM Pulsed Drain Current 64 PD @TC = 25°C Power Dissipation 190 W Linear Derating Factor 1.5 W/°C VGS Gate-to-Source Voltage ±30 V EAS Single Pulse Avalanche Energy 390 mJ IAR Avalanche Current 16 A EAR Repetitive Avalanche Energy 19 mJ dv/dt Peak Diode Recovery dv/dt 4.0 V/ns TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case) Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m) Thermal Resistance Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating Reduced Ciss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated This new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Hexfet technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. These device improvements combined with the proven ruggedness and reliability of HEXFETs offer the designer a new standard in power transistors for switching applications. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. Description Absolute Maximum Ratings Parameter Min. Typ. Max. Units RθJC Junction-to-Case –––– –––– 0.65 RθCS Case-to-Sink, Flat, Greased Surface –––– 0.24 –––– °C/W RθJA Junction-to-Ambient –––– –––– 40 Next Data Sheet Index Previous Datasheet To Order |
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