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IRFD420 Scheda tecnica(PDF) 2 Page - International Rectifier

Il numero della parte IRFD420
Spiegazioni elettronici  Power MOSFET(Vdss=500V, Rds(on)=3.0ohm, Id=0.37A)
Download  8 Pages
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Produttore elettronici  IRF [International Rectifier]
Homepage  http://www.irf.com
Logo IRF - International Rectifier

IRFD420 Scheda tecnica(HTML) 2 Page - International Rectifier

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Parameter
Min. Typ. Max. Units Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
500
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
0.59
V/°C
Reference to 25°C, ID = 1mA
RDS(on)
Static Drain-to-Source On-Resistance
3.0
VGS = 10.0V, ID = 0.22A
VGS(th)
Gate Threshold Voltage
2.0
4.0
V
VDS = VGS, ID = 250µA
gfs
Forward Transconductance
1.5
S
VDS = 50V, ID = 1.3A
IDSS
Drain-to-Source Leakage Current
25
VDS = 500V, VGS = 0V
250
VDS = 400V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
100
VGS = 20V
Gate-to-Source Reverse Leakage
-100
VGS = -20V
Qg
Total Gate Charge
24
ID = 2.1A
Qgs
Gate-to-Source Charge
3.3
nC
VDS = 400V
Qgd
Gate-to-Drain ("Miller") Charge
13
VGS = 10V
td(on)
Turn-On Delay Time
8.0
VDD = 250V
tr
Rise Time
8.6
ID = 2.1A
td(off)
Turn-Off Delay Time
33
RG = 18Ω
tf
Fall Time
16
RD = 120Ω
LD
Internal Drain Inductance
4.0
Between lead,
6mm (0.25in.)
LS
Internal Source Inductance
6.0
from package
and center of
die contact
Ciss
Input Capacitance
360
VGS = 0V
Coss
Output Capacitance
92
pF
VDS = 25V
Crss
Reverse Transfer Capacitance
37
ƒ = 1.0MHz
IRFD420
Notes:
Parameter
Min. Typ. Max. Units Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
VSD
Diode Forward Voltage
1.6
V
TJ = 25°C, IS = 0.37A, VGS = 0V
trr
Reverse Recovery Time
260
520
ns
TJ = 25°C, IF = 2.1A
Qrr
Reverse RecoveryCharge
0.70
1.4
µC
di/dt = 100A/µs
ton
Forward Turn-On Time
Repetitive rating; pulse width limited by
max. junction temperature.
VDD = 50V, starting TJ = 25°C, L = 40mH
RG = 25Ω, IAS = 1.5A.
ISD ≤ 4.4A, di/dt ≤ 90A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
Pulse width
≤ 300µs; duty cycle ≤ 2%.
Source-Drain Ratings and Characteristics
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
5.0
0.37
A
µA
nA
ns
nH
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