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IRFD420 Scheda tecnica(PDF) 2 Page - International Rectifier |
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IRFD420 Scheda tecnica(HTML) 2 Page - International Rectifier |
2 / 8 page Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 500 — — V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient — 0.59 — V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance — — 3.0 Ω VGS = 10.0V, ID = 0.22A VGS(th) Gate Threshold Voltage 2.0 — 4.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 1.5 — — S VDS = 50V, ID = 1.3A IDSS Drain-to-Source Leakage Current — — 25 VDS = 500V, VGS = 0V — — 250 VDS = 400V, VGS = 0V, TJ = 125°C IGSS Gate-to-Source Forward Leakage — — 100 VGS = 20V Gate-to-Source Reverse Leakage — — -100 VGS = -20V Qg Total Gate Charge — — 24 ID = 2.1A Qgs Gate-to-Source Charge — — 3.3 nC VDS = 400V Qgd Gate-to-Drain ("Miller") Charge — — 13 VGS = 10V td(on) Turn-On Delay Time — 8.0 — VDD = 250V tr Rise Time — 8.6 — ID = 2.1A td(off) Turn-Off Delay Time — 33 — RG = 18Ω tf Fall Time — 16 — RD = 120Ω LD Internal Drain Inductance — 4.0 — Between lead, 6mm (0.25in.) LS Internal Source Inductance — 6.0 — from package and center of die contact Ciss Input Capacitance — 360 — VGS = 0V Coss Output Capacitance — 92 — pF VDS = 25V Crss Reverse Transfer Capacitance — 37 — ƒ = 1.0MHz IRFD420 Notes: Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage — — 1.6 V TJ = 25°C, IS = 0.37A, VGS = 0V trr Reverse Recovery Time — 260 520 ns TJ = 25°C, IF = 2.1A Qrr Reverse RecoveryCharge — 0.70 1.4 µC di/dt = 100A/µs ton Forward Turn-On Time Repetitive rating; pulse width limited by max. junction temperature. VDD = 50V, starting TJ = 25°C, L = 40mH RG = 25Ω, IAS = 1.5A. ISD ≤ 4.4A, di/dt ≤ 90A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C Pulse width ≤ 300µs; duty cycle ≤ 2%. Source-Drain Ratings and Characteristics Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) — — 5.0 — — 0.37 A µA nA ns nH Next Data Sheet Index Previous Datasheet To Order |
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