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IRFD214 Scheda tecnica(PDF) 2 Page - International Rectifier |
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IRFD214 Scheda tecnica(HTML) 2 Page - International Rectifier |
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2 / 8 page  Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 250 — — V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient — 0.39 — V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance — — 2.0 VGS = 10.0V, ID = 0.27A VGS(th) Gate Threshold Voltage 2.0 — 4.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 0.90 — — S VDS = 50V, ID = 1.6A IDSS Drain-to-Source Leakage Current — — 25 VDS = 250V, VGS = 0V — — 250 VDS = 200V, VGS = 0V, TJ = 125°C IGSS Gate-to-Source Forward Leakage — — 100 VGS = 20V Gate-to-Source Reverse Leakage — — -100 VGS = -20V Qg Total Gate Charge — — 8.2 ID = 2.7A Qgs Gate-to-Source Charge — — 1.8 VDS = 200V Qgd Gate-to-Drain ("Miller") Charge — — 4.5 VGS = 10V, See Fig. 6 and 13 td(on) Turn-On Delay Time — 7.0 — VDD = 125V tr Rise Time — 7.6 — ID = 2.7A td(off) Turn-Off Delay Time — 16 — RG = 24Ω tf Fall Time — 7.0 — RD = 45Ω, See Fig. 10 LD Internal Drain Inductance — 4.0 — Between lead, LS Internal Source Inductance — 6.0 — 6mm (0.25in.) from package and center of die contact Ciss Input Capacitance — 140 — VGS = 0V Coss Output Capacitance — 42 — pF VDS = 25V Crss Reverse Transfer Capacitance — 9.6 — ƒ = 1.0MHz, See Fig. 5 IRFD214 Notes: Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage — — 2.0 V TJ = 25°C, IS = 0.45A, VGS = 0V trr Reverse Recovery Time — 190 390 ns TJ = 25°C, IF = 2.7A Qrr Reverse RecoveryCharge — 0.64 1.3 µC di/dt = 100A/µs ton Forward Turn-On Time Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) VDD = 50V, starting TJ = 25°C, L = 28mH RG = 25Ω, IAS = 1.8A. (See Figure 12) ISD ≤ 2.7A, di/dt ≤ 65A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C Pulse width ≤ 300µs; duty cycle ≤ 2%. Source-Drain Ratings and Characteristics Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) — — 3.6 — — 0.45 A Ω µA nC ns nH nA Next Data Sheet Index Previous Datasheet To Order To Order |
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