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IRFBC20S Scheda tecnica(PDF) 2 Page - International Rectifier

Il numero della parte IRFBC20S
Spiegazioni elettronici  Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=2.2A)
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Produttore elettronici  IRF [International Rectifier]
Homepage  http://www.irf.com
Logo IRF - International Rectifier

IRFBC20S Scheda tecnica(HTML) 2 Page - International Rectifier

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IRFBC20S/L
‚ VDD =50V, starting TJ = 25°C, L =31mH
RG = 25Ω, IAS = 2.2A. (See Figure 12)
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Notes:
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
ƒ ISD ≤ 2.2A, di/dt ≤ 40A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
… Uses IRFBC20 data and test conditions
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
–––
–––
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

–––
–––
p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
1.6
V
TJ = 25°C, IS = 2.2A, VGS = 0V
„
trr
Reverse Recovery Time
–––
290
580
ns
TJ = 25°C, IF = 2.0A
Qrr
Reverse Recovery Charge
–––
0.67
1.3
µC
di/dt = 100A/µs
„…
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Source-Drain Ratings and Characteristics
A
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
600
–––
–––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
0.88
–––
V/°C
Reference to 25°C, ID =1mA
…
RDS(on)
Static Drain-to-Source On-Resistance
–––
–––
4.4
VGS =10V, ID = 1.3A
„
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
VDS = VGS, ID = 250µA
gfs
Forward Transconductance
1.4
–––
–––
S
VDS = 50V, ID = 1.3A
…
–––
–––
100
µA
VDS = 600V, VGS = 0V
–––
–––
500
VDS = 480V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage
–––
–––
100
VGS = 20V
Gate-to-Source Reverse Leakage
–––
–––
-100
nA
VGS = -20V
Qg
Total Gate Charge
–––
–––
18
ID = 2.0A
Qgs
Gate-to-Source Charge
–––
–––
3.0
nC
VDS = 360V
Qgd
Gate-to-Drain ("Miller") Charge
–––
–––
8.9
VGS = 10V, See Fig. 6 and 13
„…
td(on)
Turn-On Delay Time
–––
10
–––
VDD = 300V
tr
Rise Time
–––
23
–––
ID = 2.0A
td(off)
Turn-Off Delay Time
–––
30
–––
RG = 18
tf
Fall Time
–––
25
–––
RD = 150Ω, See Fig. 10
„…
Between lead,
–––
–––
and center of die contact
Ciss
Input Capacitance
–––
350
–––
VGS = 0V
Coss
Output Capacitance
–––
48
–––
pF
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
8.6
–––
ƒ = 1.0MHz, See Fig. 5
…
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
IGSS
ns
IDSS
Drain-to-Source Leakage Current
nH
7.5
LS
Internal Source Inductance
2.2
8.0
S
D
G


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