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IRFBC20S Scheda tecnica(PDF) 1 Page - International Rectifier |
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IRFBC20S Scheda tecnica(HTML) 1 Page - International Rectifier |
1 / 10 page IRFBC20S/L PRELIMINARY HEXFET® Power MOSFET PD - 9.1014 Parameter Typ. Max. Units RθJC Junction-to-Case ––– 2.5 RθJA Junction-to-Ambient ( PCB Mounted,steady-state)** ––– 40 Thermal Resistance °C/W Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 2.2 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 1.4 A IDM Pulsed Drain Current
8.0 PD @TA = 25°C Power Dissipation 3.1 W PD @TC = 25°C Power Dissipation 50 W Linear Derating Factor 0.40 W/°C VGS Gate-to-Source Voltage ± 20 V EAS Single Pulse Avalanche Energy
84 mJ IAR Avalanche Current 2.2 A EAR Repetitive Avalanche Energy 5.0 mJ dv/dt Peak Diode Recovery dv/dt
3.0 V/ns TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C Absolute Maximum Ratings VDSS = 600V RDS(on) = 4.4Ω ID = 2.2A 2 D P a k T O - 262 S D G 7/22/97 l Surface Mount (IRFBC20S) l Low-profile through-hole (IRFBC20L) l Available in Tape & Reel (IRFBC20S) l Dynamic dv/dt Rating l 150°C Operating Temperature l Fast Switching l Fully Avalanche Rated Third generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2Pak is a surface mount power package capable ofthe accommodatingdie sizes up to HEX-4. It provides the highest power capability and the lowest possible on- resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRFBC20L) is available for low-profile applications. Description |
Codice articolo simile - IRFBC20S |
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Descrizione simile - IRFBC20S |
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