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IRFBA1405 Scheda tecnica(PDF) 1 Page - International Rectifier |
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IRFBA1405 Scheda tecnica(HTML) 1 Page - International Rectifier |
1 / 9 page HEXFET® Power MOSFET S D G VDSS = 55V RDS(on) = 5.0mΩ ID = 174A Description 3/1/01 www.irf.com 1 q Advanced Process Technology q Ultra Low On-Resistance q Dynamic dv/dt Rating q 175°C Operating Temperature q Fast Switching q Repetitive Avalanche Allowed up to Tjmax Benefits AUTOMOTIVE MOSFET IRFBA1405P Typical Applications q Electric Power Steering (EPS) q Anti-lock Braking System (ABS) q Wiper Control q Climate Control q Power Door Super-220™ Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this MOSFET are a 175oC junction operating temperature, fast switching speed and improved ruggedness in single and repetitive avalanche. The Super-220 TM is a package that has been designed to have the same mechanical outline and pinout as the industry standard TO-220 but can house a considerably larger silicon die. The result is significantly increased current handling capability over both the TO-220 and the much larger TO- 247 package. The combination of extremely low on-resistance silicon and the Super-220 TM package makes it ideal to reduce the component count in multiparalled TO-220 applications, reduce system power dissipation, upgrade existing designs or have TO-247 performance in a TO-220 outline. This package has been designed to meet automotive, Q101, qualification standard. These benefits make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 174 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 123 A IDM Pulsed Drain Current 680 PD @TC = 25°C Power Dissipation 330 W Linear Derating Factor 2.2 W/°C VGS Gate-to-Source Voltage ± 20 V EAS Single Pulse Avalanche Energy 560 mJ IAR Avalanche Current See Fig.12a, 12b, 15, 16 A EAR Repetitive Avalanche Energy mJ dv/dt Peak Diode Recovery dv/dt 5.0 V/ns TJ Operating Junction and -40 to + 175 TSTG Storage Temperature Range -55 to + 175 Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Recommended clip force 20 N °C PD -94111 |
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