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IRFB59N10D Scheda tecnica(PDF) 5 Page - International Rectifier

Il numero della parte IRFB59N10D
Spiegazioni elettronici  Power MOSFET(Vdss=100V, Rds(on)max=0.025ohm, Id=59A)
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Produttore elettronici  IRF [International Rectifier]
Homepage  http://www.irf.com
Logo IRF - International Rectifier

IRFB59N10D Scheda tecnica(HTML) 5 Page - International Rectifier

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IRFB/IRFS/IRFSL59N10D
www.irf.com
5
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on)
tr
td(off) tf
Fig 10b. Switching Time Waveforms
VDS
Pulse Width
≤ 1 µs
Duty Factor
≤ 0.1 %
RD
VGS
RG
D.U.T.
VGS
+
-VDD
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
Notes:
1. Duty factor D = t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
1
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
25
50
75
100
125
150
175
0
10
20
30
40
50
60
T , Case Temperature ( C)
°
C


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