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IRFB23N20D Scheda tecnica(PDF) 1 Page - International Rectifier

Il numero della parte IRFB23N20D
Spiegazioni elettronici  Power MOSFET(Vdss=200V, Rds(on)max=0.10ohm, Id=24A)
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Produttore elettronici  IRF [International Rectifier]
Homepage  http://www.irf.com
Logo IRF - International Rectifier

IRFB23N20D Scheda tecnica(HTML) 1 Page - International Rectifier

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www.irf.com
1
4/26/00
IRFB23N20D
IRFS23N20D
IRFSL23N20D
SMPS MOSFET
HEXFET® Power MOSFET
VDSS
RDS(on) max
ID
200V
0.10
Ω
24A
PD- 93904A
D2Pak
IRFS23N20D
TO-220AB
IRFB23N20D
TO-262
IRFSL23N20D
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
24
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
17
A
IDM
Pulsed Drain Current

96
PD @TA = 25°C
Power Dissipation
‡
3.8
W
PD @TC = 25°C
Power Dissipation
170
Linear Derating Factor
1.1
W/°C
VGS
Gate-to-Source Voltage
± 30
V
dv/dt
Peak Diode Recovery dv/dt
ƒ
3.3
V/ns
TJ
Operating Junction and
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
°C
Mounting torqe, 6-32 or M3 screw
†
10 lbf•in (1.1N•m)
Absolute Maximum Ratings
l High frequency DC-DC converters
Benefits
Applications
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
Typical SMPS Topologies
l Telecom 48V input Forward Converter


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