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IRFB11N50 Scheda tecnica(PDF) 8 Page - International Rectifier

Il numero della parte IRFB11N50
Spiegazioni elettronici  Power MOSFET(Vdss=500V, Rds(on)max=0.52ohm, Id=11A)
Download  8 Pages
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Produttore elettronici  IRF [International Rectifier]
Homepage  http://www.irf.com
Logo IRF - International Rectifier

IRFB11N50 Scheda tecnica(HTML) 8 Page - International Rectifier

  IRFB11N50 Datasheet HTML 1Page - International Rectifier IRFB11N50 Datasheet HTML 2Page - International Rectifier IRFB11N50 Datasheet HTML 3Page - International Rectifier IRFB11N50 Datasheet HTML 4Page - International Rectifier IRFB11N50 Datasheet HTML 5Page - International Rectifier IRFB11N50 Datasheet HTML 6Page - International Rectifier IRFB11N50 Datasheet HTML 7Page - International Rectifier IRFB11N50 Datasheet HTML 8Page - International Rectifier  
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 8 / 8 page
background image
IRFB11N5OA
8
www.irf.com
L E A D AS SIG N M E N T S
1 - G A T E
2 - D R A IN
3 - S O U R C E
4 - D R A IN
- B -
1 .32 (. 052)
1 .22 (. 048)
3X
0.5 5 (.0 22)
0.4 6 (.0 18)
2.9 2 (.11 5)
2.6 4 (.10 4)
4.6 9 ( .18 5)
4.2 0 ( .16 5)
3X
0.93 (.03 7)
0.69 (.02 7)
4.0 6 (.16 0)
3.5 5 (.14 0)
1.15 (.04 5)
M IN
6 .47 (.2 55)
6 .10 (.2 40)
3 .78 ( .149 )
3 .54 ( .139 )
- A -
10.5 4 (.4 15)
10.2 9 (.4 05)
2.87 (.11 3)
2.62 (.10 3)
15 .24 ( .6 0 0 )
14 .84 ( .5 8 4 )
14 .09 ( .555 )
13 .47 ( .530 )
3X
1 .40 ( .0 55)
1 .15 ( .0 45)
2.54 (.10 0)
2X
0 .3 6 (.0 1 4 )
M
B
A
M
4
1
2
3
N O T ES:
1 D IM E N S IO N IN G & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 .
3 O U T L IN E C O N F O R M S T O J E D E C O U T L IN E T O -2 2 0 A B .
2 C O N T R O L L IN G D IM E N S IO N : IN C H
4 H E A T S IN K & L E A D M E A S U R E M E N T S D O N O T IN CL UD E B U R R S .
Part Marking Information
TO-220AB
Package Outline
TO-220AB Outline
Dimensions are shown in millimeters (inches)
PAR T N U MBE R
IN TE R N A TION A L
R E C TIFIE R
L O G O
E X A M P L E :
T H IS IS A N IR F 1010
W IT H A S S E M B L Y
L O T C O D E 9 B 1 M
A S SEM BL Y
L O T
C O D E
DA T E C O DE
(YYW W )
YY = YE A R
W W
= W E E K
924 6
IR F 1 0 10
9 B
1 M
A
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 221 8371
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
http://www.irf.com/
Data and specifications subject to change without notice
3/99
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ƒ ISD ≤ 11A, di/dt ≤ 140A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
Notes:
‚ Starting T
J = 25°C, L = 4.5mH
RG = 25Ω, IAS = 11A. (See Figure 12)
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
… Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS


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