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IRF9Z24N Scheda tecnica(PDF) 2 Page - Kersemi Electronic Co., Ltd. |
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IRF9Z24N Scheda tecnica(HTML) 2 Page - Kersemi Electronic Co., Ltd. |
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2 / 8 page  Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– -1.6 V TJ = 25°C, IS = -7.2A, VGS = 0V trr Reverse Recovery Time ––– 47 71 ns TJ = 25°C, IF = -7.2A Qrr Reverse RecoveryCharge ––– 84 130 µC di/dt = -100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage -55 ––– ––– V VGS = 0V, ID = -250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– -0.05 ––– V/°C Reference to 25°C, ID = -1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.175 Ω VGS = -10V, ID = -7.2A VGS(th) Gate Threshold Voltage -2.0 ––– -4.0 V VDS = VGS, ID = -250µA gfs Forward Transconductance 2.5 ––– ––– S VDS = -25V, ID = -7.2A ––– ––– -25 µA VDS = -55V, VGS = 0V ––– ––– -250 VDS = -44V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -20V Qg Total Gate Charge ––– ––– 19 ID = -7.2A Qgs Gate-to-Source Charge ––– ––– 5.1 nC VDS = -44V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 10 VGS = -10V, See Fig. 6 and 13 td(on) Turn-On Delay Time ––– 13 ––– VDD = -28V tr Rise Time ––– 55 ––– ID = -7.2A td(off) Turn-Off Delay Time ––– 23 ––– RG = 24 Ω tf Fall Time ––– 37 ––– RD = 3.7Ω, See Fig. 10 Between lead, ––– ––– 6mm (0.25in.) from package and center of die contact Ciss Input Capacitance ––– 350 ––– VGS = 0V Coss Output Capacitance ––– 170 ––– pF VDS = -25V Crss Reverse Transfer Capacitance ––– 92 ––– ƒ = 1.0MHz, See Fig. 5 nH Electrical Characteristics @ TJ = 25°C (unless otherwise specified) LD Internal Drain Inductance LS Internal Source Inductance ––– ––– IGSS ns 4.5 7.5 IDSS Drain-to-Source Leakage Current Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) I SD ≤ -7.2A, di/dt ≤ -280A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C Notes: Starting TJ = 25°C, L = 3.7mH RG = 25Ω, IAS = -7.2A. (See Figure 12) Pulse width ≤ 300µs; duty cycle ≤ 2%. S D G Source-Drain Ratings and Characteristics A S D G -12 -48 IRF9Z24N 2014-8-9 2 www.kesemi.com |
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