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IRF7464 Scheda tecnica(PDF) 2 Page - International Rectifier |
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IRF7464 Scheda tecnica(HTML) 2 Page - International Rectifier |
2 / 8 page IRF7464 2 www.irf.com Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 1.1 ––– ––– S VDS = 50V, ID = 0.72A Qg Total Gate Charge ––– 9.5 14 ID = 0.72A Qgs Gate-to-Source Charge ––– 2.5 3.8 nC VDS = 160V Qgd Gate-to-Drain ("Miller") Charge ––– 4.6 6.9 VGS = 10V, td(on) Turn-On Delay Time ––– 11 ––– VDD = 100V tr Rise Time ––– 9.5 ––– ID = 0.72A td(off) Turn-Off Delay Time ––– 18 ––– RG = 24Ω tf Fall Time ––– 15 ––– VGS = 10V Ciss Input Capacitance ––– 280 ––– VGS = 0V Coss Output Capacitance ––– 52 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 14 ––– pF ƒ = 1.0MHz Coss Output Capacitance ––– 330 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz Coss Output Capacitance ––– 25 ––– VGS = 0V, VDS = 160V, ƒ = 1.0MHz Coss eff. Effective Output Capacitance ––– 48 ––– VGS = 0V, VDS = 0V to 160V Dynamic @ TJ = 25°C (unless otherwise specified) ns Parameter Typ. Max. Units EAS Single Pulse Avalanche Energy ––– 68 mJ IAR Avalanche Current ––– 1.2 A EAR Repetitive Avalanche Energy ––– 0.25 mJ Avalanche Characteristics S D G Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 0.72A, VGS = 0V trr Reverse Recovery Time ––– 60 90 ns TJ = 25°C, IF = 0.72A Qrr Reverse RecoveryCharge ––– 130 200 nC di/dt = 100A/µs Diode Characteristics 2.3 10 A Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 200 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.23 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.73 Ω VGS = 10V, ID = 0.72A VGS(th) Gate Threshold Voltage 3.0 ––– 5.5 V VDS = VGS, ID = 250µA ––– ––– 25 µA VDS = 200V, VGS = 0V ––– ––– 250 VDS = 160V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 30V Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -30V IGSS IDSS Drain-to-Source Leakage Current Parameter Typ. Max. Units RθJA Maximum Junction-to-Ambient ––– 50 °C/W Thermal Resistance |
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