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IRF7464 Scheda tecnica(PDF) 2 Page - International Rectifier

Il numero della parte IRF7464
Spiegazioni elettronici  Power MOSFET(Vdss=200V, Rds(on)max=0.73ohm, Id=1.2A)
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Produttore elettronici  IRF [International Rectifier]
Homepage  http://www.irf.com
Logo IRF - International Rectifier

IRF7464 Scheda tecnica(HTML) 2 Page - International Rectifier

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IRF7464
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Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
1.1
–––
–––
S
VDS = 50V, ID = 0.72A
Qg
Total Gate Charge
–––
9.5
14
ID = 0.72A
Qgs
Gate-to-Source Charge
–––
2.5
3.8
nC
VDS = 160V
Qgd
Gate-to-Drain ("Miller") Charge
–––
4.6
6.9
VGS = 10V,
„
td(on)
Turn-On Delay Time
–––
11
–––
VDD = 100V
tr
Rise Time
–––
9.5
–––
ID = 0.72A
td(off)
Turn-Off Delay Time
–––
18
–––
RG = 24Ω
tf
Fall Time
–––
15
–––
VGS = 10V
„
Ciss
Input Capacitance
–––
280
–––
VGS = 0V
Coss
Output Capacitance
–––
52
–––
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
14
–––
pF
ƒ = 1.0MHz
Coss
Output Capacitance
–––
330
–––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss
Output Capacitance
–––
25
–––
VGS = 0V, VDS = 160V, ƒ = 1.0MHz
Coss eff.
Effective Output Capacitance
–––
48
–––
VGS = 0V, VDS = 0V to 160V
…
Dynamic @ TJ = 25°C (unless otherwise specified)
ns
Parameter
Typ.
Max.
Units
EAS
Single Pulse Avalanche Energy
‚
–––
68
mJ
IAR
Avalanche Current

–––
1.2
A
EAR
Repetitive Avalanche Energy

–––
0.25
mJ
Avalanche Characteristics
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
–––
–––
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

–––
–––
p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
1.3
V
TJ = 25°C, IS = 0.72A, VGS = 0V
„
trr
Reverse Recovery Time
–––
60
90
ns
TJ = 25°C, IF = 0.72A
Qrr
Reverse RecoveryCharge
–––
130
200
nC
di/dt = 100A/µs
„
Diode Characteristics
2.3
10
A
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
200
–––
–––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
0.23
–––
V/°C
Reference to 25°C, ID = 1mA
†
RDS(on)
Static Drain-to-Source On-Resistance
–––
–––
0.73
VGS = 10V, ID = 0.72A
„
VGS(th)
Gate Threshold Voltage
3.0
–––
5.5
V
VDS = VGS, ID = 250µA
–––
–––
25
µA
VDS = 200V, VGS = 0V
–––
–––
250
VDS = 160V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage
–––
–––
100
VGS = 30V
Gate-to-Source Reverse Leakage
–––
–––
-100
nA
VGS = -30V
IGSS
IDSS
Drain-to-Source Leakage Current
Parameter
Typ.
Max.
Units
RθJA
Maximum Junction-to-Ambient
†
–––
50
°C/W
Thermal Resistance


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