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UF2003 Scheda tecnica(PDF) 1 Page - SUNMATE electronic Co., LTD

Il numero della parte UF2003
Spiegazioni elettronici  2.0A Axial Leaded Ultrafast Diode
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Produttore elettronici  SUNMATE [SUNMATE electronic Co., LTD]
Homepage  http://www.sunmate.tw/
Logo SUNMATE - SUNMATE electronic Co., LTD

UF2003 Scheda tecnica(HTML) 1 Page - SUNMATE electronic Co., LTD

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2.0A Axial Leaded Ultrafast Diode
1 of 2
UF2001 - UF2007
Features
A
A
B
C
D
DO-15
Dim
Min
Max
A
25.40
¾
B
5.50
7.62
C
0.686
0.889
D
2.60
3.60
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified
·
Diffused Junction
·
Ultra-Fast Switching for High Efficiency
·
High Current Capability and Low Forward
Voltage Drop
·
Surge Overload Rating to 60A Peak
·
Low Reverse Leakage Current
·
Plastic Material: UL Flammability
Classification Rating 94V-0
Mechanical Data
·
Case: Molded Plastic
·
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
·
Polarity: Cathode Band
·
Marking: Type Number
·
Weight: 0.4 grams (approx.)
·
Mounting Position: Any
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
UF
2001
UF
2002
UF
2003
UF
2004
UF
2005
UF
2006
UF
2007
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
50
100
200
400
600
800
1000
V
RMS Reverse Voltage
VR(RMS)
35
70
140
280
420
560
700
V
Average Rectified Output Current
(Note 1)
@ TA = 50
°C
IO
2.0
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave Superimposed on Rated Load
(JEDEC Method)
IFSM
60
A
Forward Voltage
@ IF = 2.0A
VFM
1.0
1.3
1.7
V
Peak Reverse Current
@ TA = 25
°C
at Rated DC Blocking Voltage
@ TA = 100
°C
IRM
5.0
100
mA
Reverse Recovery Time (Note 3)
trr
50
75
ns
Typical Junction Capacitance (Note 2)
Cj
50
30
pF
Typical Thermal Resistance Junction to Ambient
RqJA
50
K/W
Operating and Storage Temperature Range
Tj, TSTG
-65 to +150
°C
Notes:
1. Valid provided that leads are maintained at ambient temperature at a distance of 9.5mm from the case.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. Measured at IF = 0.5A, IR = 1.0A, Irr = 0.25A. See figure 5.


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