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SD101A Scheda tecnica(PDF) 1 Page - SUNMATE electronic Co., LTD |
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SD101A Scheda tecnica(HTML) 1 Page - SUNMATE electronic Co., LTD |
1 / 2 page 2.0A Axial Leaded Schottky Barrier Diodes 1 of 2 Features · · · @ TA = 25 °C unless otherwise specified Features · · Mechanical Data A A B C D DO-35 Dim Min Max A 25.40 ¾ B ¾ 4.00 C ¾ 0.60 D ¾ 2.00 All Dimensions in mm · Maximum Ratings and Electrical Characteristics SD101A-SD101C For general purpose applications The LL101 series is a metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications. These diodes are also available in the MiniMELF case with type designations LL101A thru LL101C. Pb / RoHS Free · Case: DO-35 Glass Case Weight: approx. 0.13g Symbol Value Unit SD101A 60 SD101B 50 SD101C 40 Maximum Single Cycle Surge 10ms Square Wave IFSM 2 A Power Dissipation (Infinite Heatsink) PD 400 (1) mW Thermal Resistance Junction to Ambient Air RθJA 0.3 (1) °C/mW Junction Temperature TJ 125 (1) °C Storage temperature range TS -55 to + 150 (1) °C Note: (1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature. V Parameter VRRM Repetitive Peak Reverse Voltage Parameter Symbol Min Typ Max Unit SD101A 60 - - SD101B 50 - - V SD101C 40 - - SD101A VR = 50 V - - 200 SD101B VR = 40 V - - 200 SD101C VR = 30 V - - 200 SD101A - - 0.41 SD101B - - 0.4 SD101C - - 0.39 SD101A - - 1.0 SD101B - - 0.95 SD101C - - 0.9 IF = IR = 5mA , recover to 0.1IR V ns nA 1 - - Reverse Recovery Time VF Trr Forward Voltage Drop IF = 15mA IF = 1mA Reverse Current IR Test Condition Reverse Breakdown Voltage V(BR)R IR = 10 µA |
Codice articolo simile - SD101A |
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Descrizione simile - SD101A |
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