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SB160 Scheda tecnica(PDF) 1 Page - SUNMATE electronic Co., LTD |
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SB160 Scheda tecnica(HTML) 1 Page - SUNMATE electronic Co., LTD |
1 / 2 page SB120 – SB1100 Features ! Schottky Barrier Chip ! Guard Ring Die Construction for Transient Protection ! High Current Capability A B A ! Low Power Loss, High Efficiency ! High Surge Current Capability ! For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications C D Mechanical Data ! Case: DO-41, Molded Plastic ! Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 ! Polarity: Cathode Band ! Weight: 0.34 grams (approx.) ! Mounting Position: Any ! Marking: Type Number ! Lead Free: For RoHS / Lead Free Version, Add “-LF” Suffix to Part Number, See Page 4 Maximum Ratings and Electrical Characteristics @T A=25°C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol SB120 SB130 SB140 SB150 SB160 SB180 SB1100 Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 20 30 40 50 60 80 100 V RMS Reverse Voltage VR(RMS) 14 21 28 35 42 56 70 V Average Rectified Output Current @TL = 100°C (Note 1) IO 1.0 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFSM 40 A Forward Voltage @IF = 1.0A VFM 0.50 0.70 0.85 V Peak Reverse Current @TA = 25°C At Rated DC Blocking Voltage @TA = 100°C IRM 0.5 10 mA Typical Junction Capacitance (Note 2) Cj 110 80 pF Typical Thermal Resistance (Note 1) RJL RJA 15 50 °C/W Operating and Storage Temperature Range Tj, TSTG -65 to +150 °C Note: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case. 2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C. DO-41 Dim Min Max A 25.4 — B 4.06 5.21 C 0.71 0.864 D 2.00 2.72 All Dimensions in mm 1.0A Axial Leaded Schottky Barrier Diode 1of2 |
Codice articolo simile - SB160 |
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Descrizione simile - SB160 |
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