 |
Motore di ricerca datesheet componenti elettronici |
|
|
Motore di ricerca datesheet componenti elettronici |
|
IRF1310S Scheda tecnica(PDF) 2 Page - International Rectifier |
|
||||||||||||||||||||||||||||||
IRF1310S Scheda tecnica(HTML) 2 Page - International Rectifier |
|
|
2 / 8 page  IRF1310S Notes: Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– 2.5 V TJ = 25°C, IS = 25A, VGS = 0V trr Reverse Recovery Time ––– 140 210 ns TJ = 25°C, IF = 25A Qrr Reverse RecoveryCharge ––– 0.79 1.2 µC di/dt = 100A/µs ton Forward Turn-On Time Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) VDD = 25V, starting TJ = 25°C, L = 3.1mH RG = 25Ω, IAS = 25A. (See Figure 12) ISD ≤ 25A, di/dt ≤ 170A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C Pulse width ≤ 300µs; duty cycle ≤ 2%. Source-Drain Ratings and Characteristics Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) ––– ––– 160 ––– ––– 41 A nH LD Internal Drain Inductance ––– 4.5 ––– LS Internal Source Inductance ––– 7.5 ––– IDSS Drain-to-Source Leakage Current IGSS ns µA nA Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 100 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.10 ––– V/°C Reference to 25°C, ID = 1mA RDS(ON) Static Drain-to-Source On-Resistance ––– ––– 0.04 Ω VGS = 10V, ID = 25A VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 12 ––– ––– S VDS = 50V, ID = 25A ––– ––– 25 VDS = 100V, VGS = 0V ––– ––– 250 VDS = 80V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V Qg Total Gate Charge ––– ––– 110 ID = 25A Qgs Gate-to-Source Charge ––– ––– 18 nC VDS = 80V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 42 VGS = 10V, See Fig. 6 and 13 td(on) Turn-On Delay Time ––– 13 ––– VDD = 50V tr Rise Time ––– 77 ––– ID = 25A td(off) Turn-Off Delay Time ––– 82 ––– RG = 9.1Ω tf Fall Time ––– 64 ––– RD = 2.0Ω, See Fig. 10 Between lead, 6mm (0.25in.) from package and center of die contact Ciss Input Capacitance ––– 2500 ––– VGS = 0V Coss Output Capacitance ––– 630 ––– pF VDS = 25V Crss Reverse Transfer Capacitance ––– 130 ––– ƒ = 1.0MHz, See Fig. 5 Next Data Sheet Index Previous Datasheet To Order |
Codice articolo simile - IRF1310S |
|
Descrizione simile - IRF1310S |
|
|
|
Link URL |
| Privacy Policy |
| ALLDATASHEETIT.COM |
| Lei ha avuto il aiuto da alldatasheet? [ DONATE ] |
Di alldatasheet | Richest di pubblicita | contatti | Privacy Policy | scambio Link | Ricerca produttore All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
Italian ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
