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N0604N Scheda tecnica(PDF) 6 Page - Renesas Technology Corp |
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N0604N Scheda tecnica(HTML) 6 Page - Renesas Technology Corp |
6 / 8 page N0604N Chapter Title R07DS0850EJ0100 Rev.1.00 Page 6 of 6 Aug 27, 2012 Package Drawing (Unit: mm) TO-220 1. Gate 2. Drain 3. Source 4. Fin (Drain) 123 4 2.54 TYP. 2.54 TYP. 2.4±0.2 1.3±0.2 0.5±0.2 8.7 TYP. 0.8±0.1 10.2 MAX. 4.8 MAX. 1.52±0.2 3.6±0.2 Equivalent Circuit Source Body Diode Gate Drain Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. |
Codice articolo simile - N0604N_15 |
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Descrizione simile - N0604N_15 |
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